Search International and National Patent Collections

1. (WO2018106535) HIGH RESISTIVITY SILICON-ON-INSULATOR STRUCTURE AND METHOD OF MANUFACTURE THEREOF

Pub. No.:    WO/2018/106535    International Application No.:    PCT/US2017/064248
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Sat Dec 02 00:59:59 CET 2017
IPC: H01L 21/762
H01L 29/51
H01L 29/66
Applicants: SUNEDISON SEMICONDUCTOR LIMITED
Inventors: LIBBERT, Jeffrey L.
LIU, Qingmin
WANG, Gang
JONES, Andrew M.
Title: HIGH RESISTIVITY SILICON-ON-INSULATOR STRUCTURE AND METHOD OF MANUFACTURE THEREOF
Abstract:
A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.