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1. (WO2018106183) RANDOM NUMBER GENERATOR AND METHOD OF FABRICATING THE SAME
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Pub. No.:
WO/2018/106183
International Application No.:
PCT/SG2017/050597
Publication Date:
14.06.2018
International Filing Date:
05.12.2017
IPC:
G06F 7/58
(2006.01) ,
H03K 3/84
(2006.01)
G
PHYSICS
06
COMPUTING; CALCULATING; COUNTING
F
ELECTRIC DIGITAL DATA PROCESSING
7
Methods or arrangements for processing data by operating upon the order or content of the data handled
58
Random or pseudo-random number generators
H
ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
3
Circuits for generating electric pulses; Monostable, bistable or multistable circuits
84
Generating pulses having a predetermined statistical distribution of a parameter, e.g. random pulse generators
Applicants:
NATIONAL UNIVERSITY OF SINGAPORE
[SG/SG]; 21 Lower Kent Ridge Road Singapore 119077, SG
Inventors:
LING, Euk Jin Alexander
; SG
GRIEVE, James Anthony
; SG
Agent:
VIERING, JENTSCHURA & PARTNER LLP
; P.O Box 1088, Rochor Post Office, Rochor Road Singapore 911833, SG
Priority Data:
62/430,509
06.12.2016
US
Title
(EN)
RANDOM NUMBER GENERATOR AND METHOD OF FABRICATING THE SAME
(FR)
GÉNÉRATEUR DE NOMBRES ALÉATOIRES ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN)
A random number generator, RNG, a method of fabricating the same, and a method of generating a random number. The RNG, comprises at least one first avalanche photodiode, APD, configured for producing "1 " events based on dark electron initiated avalanches in the first APD; at least one second avalanche photodiode, APD, configured for producing "0" events based on dark electron initiated avalanches in the second APD; and a feedback circuit configured for substantially evening out the respective numbers of generated avalanches in the first and second APDs by independently controlling respective dynamic bias voltages of the first and second APDs.
(FR)
L'invention concerne un générateur de nombres aléatoires, RNG, son procédé de fabrication, et un procédé de génération d'un nombre aléatoire. Le RNG comprend au moins une première photodiode à avalanche, APD, conçue pour produire des événements "1" sur la base d'avalanches initiées par des électrons sombres dans la première APD ; au moins une seconde photodiode à avalanche, APD, conçue pour produire des événements "0" sur la base d'avalanches initiées par des électrons sombres dans la seconde APD ; et un circuit de rétroaction conçu pour égaliser sensiblement les nombres respectifs d'avalanches générées dans les première et seconde APD par commande indépendante des tensions de polarisation dynamique respectives des première et seconde APD.
Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language:
English (
EN
)
Filing Language:
English (
EN
)