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1. (WO2018106070) COMPOUND SEMICONDUCTOR OPTICAL DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/106070 International Application No.: PCT/KR2017/014412
Publication Date: 14.06.2018 International Filing Date: 08.12.2017
IPC:
H01L 33/38 (2010.01) ,H01L 33/48 (2010.01) ,H01L 33/02 (2010.01) ,H01L 33/62 (2010.01) ,H01L 33/36 (2010.01)
Applicants: AN, Sang Jeong[KR/KR]; KR
Inventors: AN, Sang Jeong; KR
Priority Data:
10-2016-016673708.12.2016KR
10-2016-016674008.12.2016KR
10-2016-017279916.12.2016KR
Title (EN) COMPOUND SEMICONDUCTOR OPTICAL DEVICE
(FR) DISPOSITIF OPTIQUE À SEMICONDUCTEUR COMPOSÉ
(KO) 화합물 반도체 광소자
Abstract: front page image
(EN) The present disclosure relates to a compound semiconductor optical device characterized by comprising: a growth substrate; a plurality of semiconductor layers grown on the upper surface of the substrate, the plurality of semiconductor layers comprising a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; and an electric passage extending to the plurality of semiconductor layers via an opening, at least a part of the electric passage comprising a ball bumper.
(FR) La présente invention concerne un dispositif optique à semiconducteur composé caractérisé en ce qu'il comprend : un substrat de croissance; une pluralité de couches semiconductrices développées sur la surface supérieure du substrat, la pluralité de couches semiconductrices comprenant une première couche semiconductrice ayant une première conductivité, une seconde couche semiconductrice ayant une seconde conductivité différente de la première conductivité, et une couche active interposée entre la première couche semiconductrice et la seconde couche semiconductrice; et un passage électrique s'étendant jusqu'à la pluralité de couches semiconductrices par l'intermédiaire d'une ouverture, au moins une partie du passage électrique comprenant un pare-chocs à billes.
(KO) 본 개시는 성장 기판; 기판의 상면 측에 성장되는 복수의 반도체층;으로서, 제1 도전성을 가지는 제1 반도체층, 제1 도전성과 다른 제2 도전성을 가지는 제2 반도체층, 및 제1 반도체층과 제2 반도체층 사이에 개재되는 활성층을 포함하는 복수의 반도체층; 그리고, 개구를 거쳐 복수의 반도체층으로 이어지는 전기적 통로;로서, 적어도 일부가 볼 범퍼로 이루어지는 전기적 통로;를 포함하는 것을 특징으로 하는 화합물 반도체 광소(COMPOUND SEMICONDUCTOR OPTICLA DEVICE)자에 관한 것이다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)