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1. (WO2018105662) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/105662    International Application No.:    PCT/JP2017/043841
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Thu Dec 07 00:59:59 CET 2017
IPC: H01L 23/29
H01L 21/3205
H01L 21/56
H01L 21/768
H01L 23/12
H01L 23/31
H01L 23/522
Applicants: HITACHI CHEMICAL COMPANY, LTD.
日立化成株式会社
Inventors: KASAHARA Aya
笠原 彩
NONAKA Toshihisa
野中 敏央
FUJIMOTO Daisuke
藤本 大輔
SUZUKI Naoya
鈴木 直也
Title: METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Abstract:
This method for producing a semiconductor device comprises: a step (I) wherein one or more semiconductor elements, each of which has an active surface, are arranged on a thermosetting resin film containing a thermosetting resin composition so that the thermosetting resin film and the active surfaces of the semiconductor elements are in contact with each other; a step (II) wherein the semiconductor elements arranged on the thermosetting resin film are sealed by means of a member for semiconductor sealing; a step (III) wherein the thermosetting resin film or a cured product thereof is provided with an opening that reaches the active surfaces of the semiconductor elements after the step (II); and a step (IV) wherein the opening is filled with a conductor, or alternatively, a conductor layer is formed within the opening.