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|1. (WO2018105662) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE|
|Applicants:||HITACHI CHEMICAL COMPANY, LTD.
|Title:||METHOD FOR PRODUCING SEMICONDUCTOR DEVICE|
This method for producing a semiconductor device comprises: a step (I) wherein one or more semiconductor elements, each of which has an active surface, are arranged on a thermosetting resin film containing a thermosetting resin composition so that the thermosetting resin film and the active surfaces of the semiconductor elements are in contact with each other; a step (II) wherein the semiconductor elements arranged on the thermosetting resin film are sealed by means of a member for semiconductor sealing; a step (III) wherein the thermosetting resin film or a cured product thereof is provided with an opening that reaches the active surfaces of the semiconductor elements after the step (II); and a step (IV) wherein the opening is filled with a conductor, or alternatively, a conductor layer is formed within the opening.