Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018105589) TFT SUBSTRATE, SCANNING ANTENNA COMPRISING TFT SUBSTRATE, AND TFT SUBSTRATE PRODUCTION METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/105589 International Application No.: PCT/JP2017/043581
Publication Date: 14.06.2018 International Filing Date: 05.12.2017
IPC:
H01L 29/786 (2006.01) ,G02F 1/13 (2006.01) ,H01L 21/336 (2006.01) ,H01Q 3/34 (2006.01) ,H01Q 3/44 (2006.01) ,H01Q 13/22 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
3
Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an aerial or aerial system
26
varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
30
varying the phase
34
by electrical means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
3
Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an aerial or aerial system
44
varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
13
Waveguide horns or mouths; Slot aerials; Leaky-waveguide aerials; Equivalent structures causing radiation along the transmission path of a guided wave
20
Non-resonant leaky-waveguide or transmission-line aerials; Equivalent structures causing radiation along the transmission path of a guided wave
22
Longitudinal slot in boundary wall of waveguide or transmission line
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
美崎 克紀 MISAKI Katsunori; --
Agent:
奥田 誠司 OKUDA Seiji; JP
Priority Data:
2016-23926609.12.2016JP
Title (EN) TFT SUBSTRATE, SCANNING ANTENNA COMPRISING TFT SUBSTRATE, AND TFT SUBSTRATE PRODUCTION METHOD
(FR) SUBSTRAT DE TRANSISTOR À COUCHES MINCES, ANTENNE À BALAYAGE COMPRENANT UN SUBSTRAT DE TRANSISTOR À COUCHES MINCES, ET PROCÉDÉ DE PRODUCTION DE SUBSTRAT DE TRANSISTOR À COUCHES MINCES
(JA) TFT基板、TFT基板を備えた走査アンテナ、およびTFT基板の製造方法
Abstract:
(EN) A TFT substrate (105) having a dielectric substrate (1) and a plurality of antenna unit areas (U) arranged upon the dielectric substrate. Each of the plurality of antenna unit areas has a TFT (10) and a patch electrode (7PE) connected to a drain electrode (7D) in the TFT. The TFT substrate has: a source metal layer (7) supported by the dielectric substrate and including a TFT source electrode (7S), the drain electrode, a source bus line (SL) connected to the source electrode, and the patch electrode; a gate metal layer (3) formed upon the source metal layer and including a TFT gate electrode (3G) and a gate bus line (GL) connected to the gate electrode; a gate insulation layer (4) formed between the source metal layer and the gate metal layer; and an interlayer insulation layer (11) formed upon the gate metal layer.
(FR) L'invention concerne un substrat de transistor à couches minces (105) comprenant un substrat diélectrique (1) et une pluralité de zones d'unité d'antenne (U) disposées sur le substrat diélectrique. Chaque zone de la pluralité de zones d'unité d'antenne a un transistor à couches minces (10) et une électrode à plaque (7PE) connectée à une électrode de drain (7D) dans le transistor à couches minces. Le substrat de transistor à couches minces comprend : une couche de métal de source (7) supportée par le substrat diélectrique et comprenant une électrode de source de transistor à couches minces (7S), l'électrode de drain, une ligne de bus de source (SL) connectée à l'électrode de source, et l'électrode à plaque ; une couche de métal de grille (3) formée sur la couche de métal de source et comprenant une électrode de grille de transistor à couches minces (3G) et une ligne de bus de grille (GL) connectée à l'électrode de grille ; une couche d'isolation de grille (4) formée entre la couche de métal de source et la couche de métal de grille ; et une couche d'isolation intercalaire (11) formée sur la couche de métal de grille.
(JA) TFT基板(105)は、誘電体基板(1)と、誘電体基板上に配列された複数のアンテナ単位領域(U)とを有し、複数のアンテナ単位領域のそれぞれは、TFT(10)と、TFTのドレイン電極(7D)に接続されたパッチ電極(7PE)とを有する。TFT基板は、誘電体基板に支持され、TFTのソース電極(7S)、ドレイン電極、ソース電極に接続されたソースバスライン(SL)、およびパッチ電極を含むソースメタル層(7)と、ソースメタル層上に形成され、TFTのゲート電極(3G)およびゲート電極に接続されたゲートバスライン(GL)を含むゲートメタル層(3)と、ソースメタル層とゲートメタル層との間に形成されたゲート絶縁層(4)と、ゲートメタル層上に形成された層間絶縁層(11)とを有する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)