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1. (WO2018105558) SOLID-STATE IMAGING ELEMENT
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Pub. No.: WO/2018/105558 International Application No.: PCT/JP2017/043487
Publication Date: 14.06.2018 International Filing Date: 04.12.2017
IPC:
H01L 27/146 (2006.01) ,H04N 5/369 (2011.01) ,H04N 9/07 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
9
Details of colour television systems
04
Picture signal generators
07
with one pick-up device only
Applicants:
凸版印刷株式会社 TOPPAN PRINTING CO.,LTD. [JP/JP]; 東京都台東区台東一丁目5番1号 5-1, Taito 1-chome, Taito-ku, Tokyo 1100016, JP
Inventors:
山本 和人 YAMAMOTO Kazuto; JP
坂田 陽 SAKATA Yo; JP
Agent:
廣瀬 一 HIROSE Hajime; JP
宮坂 徹 MIYASAKA Toru; JP
Priority Data:
2016-23584005.12.2016JP
Title (EN) SOLID-STATE IMAGING ELEMENT
(FR) ÉLÉMENT D'IMAGERIE À SEMICONDUCTEURS
(JA) 固体撮像素子
Abstract:
(EN) Provide is a solid-state imaging element which is capable of efficiently reflecting red light that has transmitted through a photoelectric conversion element toward the photoelectric conversion element, while having excellent red light sensitivity, and wherein a substrate is easily handled during the formation of the element. This solid-state imaging element is configured such that a plurality of photoelectric conversion elements 21 are two-dimensionally arranged within a semiconductor layer (20). The semiconductor layer (20) is formed on a supporting substrate (10), in the surface of which an interlayer insulating layer (22) and a plurality of light-reflecting structures (14) are formed. Each light-reflecting structure (14) comprises a light-transmitting layer (11) and a reflective metal (12) that has the form of a curved surface and covers the surface of the light-transmitting layer (11); and the light-reflecting structures (14) are arranged on the back surface side of the photoelectric conversion elements (21), respectively. The interlayer insulating layer (22) is positioned between light-reflecting structures (14) adjacent to each other.
(FR) L'invention concerne un élément d'imagerie à semiconducteurs qui est capable de réfléchir efficacement la lumière rouge qui a été transmise à travers un élément de conversion photoélectrique vers l'élément de conversion photoélectrique, tout en ayant une excellente sensibilité à la lumière rouge, et un substrat étant facilement manipulé pendant la formation de l'élément. Cet élément d'imagerie à semiconducteurs est configuré de telle sorte qu'une pluralité d'éléments de conversion photoélectrique 21 sont disposés en deux dimensions à l'intérieur d'une couche semiconductrice (20). La couche semiconductrice (20) est formée sur un substrat de support (10), dans la surface duquel une couche isolante intercouche (22) et une pluralité de structures de réflexion de lumière (14) sont formées. Chaque structure de réflexion de lumière (14) comprend une couche de transmission de lumière (11) et un métal réfléchissant (12) qui a la forme d'une surface incurvée et recouvre la surface de la couche de transmission de lumière (11); et les structures de réflexion de lumière (14) sont agencées sur le côté de surface arrière des éléments de conversion photoélectrique (21), respectivement. La couche isolante intercouche (22) est positionnée entre des structures de réflexion de lumière (14) adjacentes l'une à l'autre.
(JA) 光電変換素子を透過した赤色光を効率よく光電変換素子に向けて反射することができて優れた赤色光感度を有し、かつ、素子形成時の基板ハンドリングが容易である固体撮像素子を提供する。固体撮像素子は、半導体層(20)内に複数の光電変換素子21が二次元状に配列されて構成されている。そして、半導体層(20)は、表面に層間絶縁層(22)と複数の光反射構造(14)とが形成された支持基板(10)上に形成されている。光反射構造(14)は、光透過層(11)と該光透過層(11)の表面を覆う曲面形状からなる反射金属(12)とを有し、かつ、各光電変換素子(21)の裏面側にそれぞれ配置されている。層間絶縁層(22)は、隣り合う光反射構造(14)の間に位置している。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)