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1. (WO2018105317) SILICON SINGLE CRYSTAL PRODUCTION METHOD, AND SILICON SINGLE CRYSTAL WAFER

Pub. No.:    WO/2018/105317    International Application No.:    PCT/JP2017/040698
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Tue Nov 14 00:59:59 CET 2017
IPC: C30B 29/06
C30B 15/20
Applicants: SHIN-ETSU HANDOTAI CO.,LTD.
信越半導体株式会社
Inventors: SUGAWARA Kosei
菅原 孝世
HOSHI Ryoji
星 亮二
Title: SILICON SINGLE CRYSTAL PRODUCTION METHOD, AND SILICON SINGLE CRYSTAL WAFER
Abstract:
The present invention is a silicon single crystal production method in which a silicon single crystal is grown in such a manner that the relation represented by the formula: 1096/D-(0.134×M+80×R)/D > 0.7 can be satisfied, wherein the silicon single crystal drawing diameter is 300 mm or more, the growth axis direction of the silicon single crystal is <111>, D [mm] represents the silicon single crystal drawing diameter, M [Gauss] represents the center magnetic field strength of the surface of a raw material melt, and R [rpm] represents the rotation velocity of the silicon single crystal in the drawing of the silicon single crystal by Czochralski method while applying a magnetic field to the raw material melt. It becomes possible to produce a <111> crystal having a good macroscopic RRG distribution and good microscopic fluctuations in resistivity.