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1. (WO2018105310) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/105310    International Application No.:    PCT/JP2017/040515
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Sat Nov 11 00:59:59 CET 2017
IPC: H01L 29/06
H01L 21/3205
H01L 21/768
H01L 23/522
H01L 29/41
H01L 29/78
Applicants: DENSO CORPORATION
株式会社デンソー
Inventors: MIZUKAMI Taku
水上 拓
Title: SEMICONDUCTOR DEVICE
Abstract:
This semiconductor device is provided with: a semiconductor substrate (30); a plurality of guard rings (10) annularly formed on the surface of one face (30a) of the semiconductor substrate and having mutually different potentials; a plurality of first electrode layers (11) formed along the guard rings, corresponding to the guard rings, and electrically connected to the guard rings; and a second electrode layer (12) laminated via an insulating layer (41) on the first electrode layers and electrically connected to the first electrode layers through a relay layer (13) penetrating the insulating layer. The second electrode layer overlaps, in the lamination direction, with at least a portion of at least two of the first electrode layers having different potentials.