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1. (WO2018104992) GE, SIGE OR GERMANIDE WASHING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/104992 International Application No.: PCT/JP2016/086014
Publication Date: 14.06.2018 International Filing Date: 05.12.2016
IPC:
H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants: INTERUNIVERSITY MICROELECTRONICS CENTRE[BE/BE]; Kapeldreef 75, B-3001, Leuven, BE
KURITA WATER INDUSTRIES LTD.[JP/JP]; 10-1, Nakano 4-chome, Nakano-ku, Tokyo 1640001, JP
Inventors: GAN, Nobuko; JP
NAGAI, Tatsuo; JP
SEBAAI, Farid; BE
WOSTYN, Kurt; BE
Agent: SHIGENO, Tsuyoshi; JP
SHIGENO, Takayuki; JP
Priority Data:
Title (EN) GE, SIGE OR GERMANIDE WASHING METHOD
(FR) PROCÉDÉ DE LAVAGE DE GE, DE SIGE OU DE GERMANIURE
(JA) Ge、SiGeまたはゲルマニドの洗浄方法
Abstract:
(EN) The objective of the invention is to wash and eliminate resists and metal residues effectively, in a Ge, SiGe or germanide layer washing process during semiconductor device production, without dissolving the Ge, the SiGe or the germanide. A sulfuric acid solution is used as the washing solution, wherein the sulfuric acid concentration is 90% by weight or higher, and the oxidant concentration is 200 g/L or higher. An electrolytic solution obtained by electrolyzing a sulfuric acid solution, a solution from mixing hydrogen peroxide in an acid solution, or a solution from dissolving ozone gas in a sulfuric acid solution, may be cited as the washing solution. The processing temperature during the wash is preferably 50°C or higher.
(FR) L’objectif de l’invention est de laver et d’éliminer les enduits résistants et les résidus de métal efficacement, lors d’un processus de lavage de couches de Ge, de SiGe ou de germaniure pendant la production de dispositifs semi-conducteurs, sans dissoudre le Ge, le SiGe ou le germaniure. Une solution d’acide sulfurique est utilisée en tant que solution de lavage, la concentration en acide sulfurique étant supérieure ou égale à 90 % en poids, et la concentration en oxydant étant supérieure ou égale à 200 g/L. Une solution électrolytique obtenue par électrolyse d’une solution d’acide sulfurique, une solution obtenue par mélange de peroxyde d’hydrogène dans une solution acide, ou une solution obtenue par dissolution d’ozone gazeux dans une solution d’acide sulfurique, peuvent être citées en tant que solution de lavage. La température de traitement pendant le lavage est de préférence supérieure ou égale à 50 °C.
(JA) 半導体デバイス製造時のGe、SiGeまたはゲルマニド層の洗浄工程において、Ge、SiGeまたはゲルマニドを溶解させずにレジストや金属残渣を効率的に洗浄除去する。洗浄液として、硫酸濃度90重量%以上で、酸化剤濃度が200g/L以下の硫酸溶液を用いる。洗浄液としては、硫酸溶液を電気分解して得られた電解液、酸溶液に過酸化水素を混合した溶液、又は硫酸溶液にオゾンガスを溶解させた溶液が挙げられ、洗浄時の処理温度は50℃以下であることが好ましい。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)