Search International and National Patent Collections

1. (WO2018104741) SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Pub. No.:    WO/2018/104741    International Application No.:    PCT/GB2017/053686
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Fri Dec 08 00:59:59 CET 2017
IPC: H01L 21/02
H01S 5/34
Applicants: UCL BUSINESS PLC
Inventors: TANG, Mingchu
LIAO, Mengya
CHEN, Siming
WU, Jiang
SEEDS, Alwyn
LIU, Huiyun
Title: SEMICONDUCTOR DEVICE AND FABRICATION METHOD
Abstract:
A semiconductor device comprising a nominally or exactly (001) or equivalent orientation silicon substrate on which is grown directly a < 100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realised by direct epitaxy on nominally or exactly (001) or equivalent orientation silicon.