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1. (WO2018103647) METHOD FOR FABRICATING ULTRAVIOLET PHOTODETECTOR BASED ON GA2O3 MATERIAL

Pub. No.:    WO/2018/103647    International Application No.:    PCT/CN2017/114675
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Wed Dec 06 00:59:59 CET 2017
IPC: H01L 31/18
H01L 31/107
H01L 31/032
H01L 31/11
H01L 31/0296
Applicants: XIDIAN UNIVERSITY
西安电子科技大学
Inventors: JIA, Renxu
贾仁需
YUAN, Lei
元磊
ZHANG, Hongpeng
张弘鹏
ZHANG, Yuming
张玉明
Title: METHOD FOR FABRICATING ULTRAVIOLET PHOTODETECTOR BASED ON GA2O3 MATERIAL
Abstract:
Provided is a method for fabricating an ultraviolet photodetector based on a Ga2O3 material. The fabrication comprises: selecting a substrate (step 101);forming a Ga2O3 layer on the substrate (step 102); forming a top electrode on the Ga2O3 layer (step 103); A Ga2O3 material is used and light transmittance in a blind zone can reach 80% or higher, even up to 90%, making it suitable for use in a light-absorbing layer; in addition, the transparent conductive electrical properties of the invention also are advantageous to increasing the light absorption capability of the light-absorbing layer, thus significantly improving the device performance of the photodetector diode.