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1. (WO2018103646) CH3NH3PBI3 MATERIAL-BASED METHOD FOR FABRICATING HEMT/HHMT DEVICE

Pub. No.:    WO/2018/103646    International Application No.:    PCT/CN2017/114674
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Wed Dec 06 00:59:59 CET 2017
IPC: H01L 51/42
Applicants: XIDIAN UNIVERSITY
西安电子科技大学
Inventors: JIA, Renxu
贾仁需
YUAN, Lei
元磊
WANG, Yucheng
汪钰成
PANG, Tiqiang
庞体强
ZHANG, Yuming
张玉明
Title: CH3NH3PBI3 MATERIAL-BASED METHOD FOR FABRICATING HEMT/HHMT DEVICE
Abstract:
A C3NH3PbI3 material-based method for fabricating a High Electron Mobility Transistor (HEMT)/High Hole Mobility Transistor (HHMT) device. The fabrication comprises: selecting an Al2O3 substrate (101); fabricating a source electrode and a drain electrode (105); forming a first electron transport layer (106) on the source electrode, the drain electrode (105) and a surface of the Al2O3 substrate (101) which is not covered by the source electrode and the drain electrode (105); fabricating a CH3NH3PbI3 material on a surface of the first electron transport layer (106) to form a first light-absorbing layer (107); forming a gate electrode (108) on a surface of the first light-absorbing layer (107) so as to complete the fabrication of an HEMT device.