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1. (WO2018103645) METHOD OF PREPARING NPN/PNP PHOTOELECTRIC TRANSISTOR HAVING GA2O3/SIC HETEROJUNCTION

Pub. No.:    WO/2018/103645    International Application No.:    PCT/CN2017/114673
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Wed Dec 06 00:59:59 CET 2017
IPC: H01L 31/11
H01L 31/0352
H01L 31/18
Applicants: XIDIAN UNIVERSITY
西安电子科技大学
Inventors: YUAN, Lei
元磊
JIA, Renxu
贾仁需
ZHANG, Hongpeng
张弘鹏
ZHANG, Yuming
张玉明
Title: METHOD OF PREPARING NPN/PNP PHOTOELECTRIC TRANSISTOR HAVING GA2O3/SIC HETEROJUNCTION
Abstract:
A method of preparing an NPN/PNP photoelectric transistor having a Ga2O3/SiC heterojunction. The preparation method comprises: selecting a SiC substrate (1); growing a homogeneous epitaxial layer (2) on a surface of the SiC substrate to form a collector region, and growing a heterogeneous epitaxial layer (3) on a surface of the homogeneous epitaxial layer and performing etching to form a base region, and growing a β-Ga2O3 material (4) on a surface of the heterogeneous epitaxial layer, and performing etching to form an emitter region; growing a first metal material on a surface of the collector region to form a collector electrode (6); and growing a second metal material on a surface of the emitter region to form an emitter electrode (5).