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|1. (WO2018103606) GAN FIN-TYPED TRANSISTOR HAVING HIGH LINEARITY AND HIGH ELECTRON MOBILITY, AND MANUFACTURING METHOD THEREOF|
|Applicants:||CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 RESEARCH INSTITUTE
|Title:||GAN FIN-TYPED TRANSISTOR HAVING HIGH LINEARITY AND HIGH ELECTRON MOBILITY, AND MANUFACTURING METHOD THEREOF|
A GaN fin-typed transistor having high linearity and high electron mobility, and a manufacturing method thereof. The transistor has a structure comprising, from the bottom to the top: a substrate (1), a buffer layer (2), a depletion layer (3), and a passivation layer (6). A source electrode (4) is disposed above one end of the depletion layer, and a drain electrode (5) is disposed above the other end of the depletion layer. The passivation layer is disposed above the depletion layer between the source electrode and the drain electrode. A recess (7) is provided at the passivation layer and contains a T-shaped grating (9) disposed therein. The passivation layer is characterized in that: GaN-based three-dimensional fins (8) are etched on the buffer layer and the depletion layer limited only in a region below the recess and have a periodic arrangement; the GaN-based three-dimensional fins have lengths identical to that of the recess; and an isolation recess is formed by etching and provided between the GaN-based three-dimensional fins. The device has high linearity and a high output current, strong gate control, favorable heat dissipation performance, and a high frequency characteristic. The manufacturing method thereof is simple and reliable, and suitable for a large-power highly-linear microwave power device.