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1. (WO2018103399) PHOTODIODE DEVICE, METHOD FOR MANUFACTURING SAME, AND PHOTODIODE DETECTOR

Pub. No.:    WO/2018/103399    International Application No.:    PCT/CN2017/101365
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Wed Sep 13 01:59:59 CEST 2017
IPC: H01L 31/0352
H01L 31/18
Applicants: NUCTECH COMPANY LIMITED
同方威视技术股份有限公司
Inventors: ZHANG, Lan
张岚
HU, Haifan
胡海帆
CAO, Xuepeng
曹雪朋
LI, Jun
李军
Title: PHOTODIODE DEVICE, METHOD FOR MANUFACTURING SAME, AND PHOTODIODE DETECTOR
Abstract:
Disclosed are a photodiode device, a method for manufacturing same, and a photodiode detector. A method for manufacturing a photodiode device comprises: growing an epitaxial layer (101-2) on a first surface of a substrate (101-1), the epitaxial layer (101-2) being a first type lightly doped epitaxial layer, and forming, in the substrate (101-1), a first type heavily doped region in contact with the first type lightly doped epitaxial layer (101-2); from a side of a second surface, opposite to the first surface, of the substrate (101-1), thinning the substrate (101-1), and exposing the first type heavily doped region; patterning the first type heavily doped region from the side of the second surface of the substrate (101-1) to form a groove therein, the groove penetrating the first type heavily doped region to go into the epitaxial layer (101-2), and the patterned first type heavily doped region serving as a first electrode region (103) of the photodiode device; and forming a second type heavily doped region at the bottom of the groove, the region serving as a second electrode region (105) of the photodiode device.