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1. (WO2018103269) SCHOTTKY BARRIER RECTIFIER

Pub. No.:    WO/2018/103269    International Application No.:    PCT/CN2017/083960
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Fri May 12 01:59:59 CEST 2017
IPC: H01L 29/872
H01L 29/20
Applicants: GPOWER SEMICONDUCTOR, INC.
苏州捷芯威半导体有限公司
Inventors: PEI, Yi
裴轶
LIU, Qiang
刘强
Title: SCHOTTKY BARRIER RECTIFIER
Abstract:
Provided is a Schottky barrier rectifier (10), comprising: a communicating layer (100); a drifting layer (200) which is arranged at one side of the communicating layer and forms a hetero-junction structure together with the communicating layer; an anodic metal (400) which is arranged at one side, away from the communicating layer, of the drifting layer; and a cathodic metal (500) which is arranged at one side, away from the drifting layer, of the communicating layer. Between a surface, away from the communicating layer, of the drifting layer and a surface, close to the communicating layer, thereof, there is a first region extending along a thickness direction thereof, wherein the first region includes a first metal element and the content of the first metal element in the first region changes along the thickness direction. The rectifier uses a polarization charge formed by a hetero-junction, so that the voltage endurance capability of a device can be improved.