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1. (WO2018103161) FLEXIBLE VERTICAL-TRENCH ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR FABRICATION THEREOF

Pub. No.:    WO/2018/103161    International Application No.:    PCT/CN2016/113013
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Fri Dec 30 00:59:59 CET 2016
IPC: H01L 51/50
H01L 51/52
H01L 51/56
Applicants: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
武汉华星光电技术有限公司
Inventors: BU, Chenghao
卜呈浩
HU, Guoren
胡国仁
Title: FLEXIBLE VERTICAL-TRENCH ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR FABRICATION THEREOF
Abstract:
The present invention provides a flexible vertical-trench organic thin-film transistor and method for fabrication thereof; the conventional configuration of a flat-trench organic thin-film transistor is altered, and a vertical-trench configuration is used to significantly shorten the length of the trench, such that the thin-film transistor obtains a larger leakage current at a lower drive voltage; a defect-free graphene material having high electrical conductivity and high transparency is used to fabricate a gate, thus improving the electrical properties of the thin-film transistor; hexagonal boron nitride material is used to fabricate a gate insulating layer, having a collective function with the gate fabricated from graphene material, improving the electrical properties of the thin-film transistor; furthermore, the graphene material and the hexagonal boron nitride material both are two-dimensional atomic layer structures having better bending performance, and an organic semiconductor material that is flexible is used for the trench layer such that the bending performance of the entire organic thin-film transistor is significantly improved, which is advantageous to applications of the organic thin-film transistor in flexible OLED display screens.