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1. (WO2018102299) BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GAN TRANSISTOR BASED POWER CONVERTERS
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Pub. No.: WO/2018/102299 International Application No.: PCT/US2017/063442
Publication Date: 07.06.2018 International Filing Date: 28.11.2017
IPC:
H03K 17/56 (2006.01) ,H01L 27/00 (2006.01) ,H01L 27/02 (2006.01) ,H02M 7/538 (2007.01) ,H03K 17/00 (2006.01) ,H03K 17/51 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
53
using devices of a triode or transistor type requiring continuous application of a control signal
537
using semiconductor devices only, e.g. single switched pulse inverters
538
in a push-pull configuration
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
Applicants:
EFFICIENT POWER CONVERSION CORPORATION [US/US]; 909 N. Sepulveda Boulevard, Suite 230 El Segundo, California 90245, US
Inventors:
REUSCH, David C.; US
GLASER, John; US
DE ROOIJ, Michael A.; US
Agent:
SOFFEN, Stephen A.; US
Priority Data:
62/428,85401.12.2016US
Title (EN) BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GAN TRANSISTOR BASED POWER CONVERTERS
(FR) CIRCUIT DE GESTION DE SURTENSION DE CONDENSATEUR AUTO-ÉLÉVATEUR DE CONVERTISSEURS DE PUISSANCE À TRANSISTORS AU GAN
Abstract:
(EN) A drive circuit for a half bridge transistor circuit formed of enhancement mode GaN transistors. A shunt diode is connected to the bootstrap capacitor at a node between the bootstrap capacitor and ground, the shunt diode being decoupled from the midpoint node of the half bridge by a shunt resistor. The shunt diode advantageously provides a low voltage drop path to charge the bootstrap capacitor during the dead-time charging period when both the high side and low side transistors of the half bridge are off.
(FR) L'invention concerne un circuit d'attaque d'un circuit de transistors en demi-pont formé de transistors au GaN à mode d'enrichissement. Une diode de dérivation est connectée au condensateur auto-élévateur au niveau d'un nœud situé entre le condensateur auto-élévateur et la masse, la diode de dérivation étant dérivée du nœud intermédiaire du demi-pont par une résistance de dérivation. La diode de dérivation fournit avantageusement un trajet de chute de basse tension servant à charger le condensateur auto-élévateur pendant la période de charge de temps mort lorsque les transistors côté haut et côté bas du demi-pont sont tous les deux bloqués.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)