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1. (WO2018102088) METHOD FOR GENERATING VERTICAL PROFILES IN ORGANIC LAYER ETCHES

Pub. No.:    WO/2018/102088    International Application No.:    PCT/US2017/060449
Publication Date: Fri Jun 08 01:59:59 CEST 2018 International Filing Date: Wed Nov 08 00:59:59 CET 2017
IPC: H01L 21/033
H01L 21/3065
H01J 37/32
Applicants: LAM RESEARCH CORPORATION
Inventors: JAYANTI, Sriharsha
CHO, SangJun
CHUANG, Steven
HUANG, Hsu-Cheng
WU, Jian
Title: METHOD FOR GENERATING VERTICAL PROFILES IN ORGANIC LAYER ETCHES
Abstract:
A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.