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|1. (WO2018101770) TWO-TERMINAL VERTICAL TYPE 1T-DRAM AND MANUFACTURING METHOD THEREFOR|
|Applicants:||INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
|Inventors:||PARK, Jae Gun
SONG, Seung Hyun
KIM, Min Won
|Title:||TWO-TERMINAL VERTICAL TYPE 1T-DRAM AND MANUFACTURING METHOD THEREFOR|
A two-terminal vertical type 1T-DRAM and a manufacturing method therefor are disclosed. According to one embodiment of the present invention, the two-terminal vertical type 1T-DRAM comprises: a cathode layer formed as a first-type high-concentration semiconductor layer; a base region including a second-type low-concentration semiconductor layer formed on the cathode layer and a first-type low-concentration semiconductor layer formed on the second-type low-concentration semiconductor layer; and an anode layer formed as a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer.