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Machine translation
1. (WO2018101758) HEATING UNIT AND INGOT GROWING DEVICE INCLUDING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/101758    International Application No.:    PCT/KR2017/013883
Publication Date: 07.06.2018 International Filing Date: 30.11.2017
IPC:
C30B 15/14 (2006.01), C30B 15/10 (2006.01), C30B 35/00 (2006.01), C30B 29/06 (2006.01), H05B 3/10 (2006.01), H05B 3/14 (2006.01)
Applicants: WOONGJIN ENERGY CO., LTD. [KR/KR]; (Gwanpyeong-dong) Daedeok Techno Valley, 37, Techno 2-ro, Yuseong-gu, Daejeon 34012 (KR)
Inventors: BAIK, Sung Sun; (KR).
PANG, Il Sun; (KR).
KIM, Kwang Hun; (KR)
Agent: ERUUM & LEEON INTELLECTUAL PROPERTY LAW FIRM; (Banpo-dong) 3rd Floor, 108, Sapyeong-daero, Seocho-gu, Seoul 06575 (KR)
Priority Data:
10-2016-0161977 30.11.2016 KR
Title (EN) HEATING UNIT AND INGOT GROWING DEVICE INCLUDING SAME
(FR) UNITÉ DE CHAUFFAGE ET DISPOSITIF DE CROISSANCE DE LINGOT COMPRENANT LADITE UNITÉ DE CHAUFFAGE
(KO) 히팅 유닛 및 이를 포함하는 잉곳 성장 장치
Abstract: front page image
(EN)The present invention relates to an ingot growing device for growing a single crystal silicon ingot. According to one embodiment of the present invention, the ingot growing device comprises: a growing chamber having an inner space; a growing container located in the inner space and having a silicon solution accommodated therein; a heating unit encompassing the growing container and located thereat, and generating heat; and a susceptor for supporting the growing container, wherein the heating unit comprises: a first ring heater having a ring shape; a second ring heater having a ring shape and located at the lower part of the first ring heater; a first coupling unit for coupling the first ring heater and the second ring heater; and a first ring support unit located between the first ring heater and the second ring heater and supporting the first ring heater.
(FR)La présente invention concerne un dispositif de croissance de lingot permettant la croissance d'un lingot de silicium monocristallin. Selon un mode de réalisation de la présente invention, le dispositif de croissance de lingot comprend : une chambre de croissance ayant un espace interne; un récipient de croissance situé dans l'espace interne et contenant une solution de silicium; une unité de chauffage englobant le récipient de croissance et située au niveau de ce dernier, et générant de la chaleur; et un suscepteur pour soutenir le récipient de croissance, l'unité de chauffage comprenant : un premier élément chauffant annulaire ayant une forme annulaire; un second élément chauffant annulaire ayant une forme annulaire et situé au niveau de la partie inférieure du premier élément chauffant annulaire; une première unité d'accouplement pour accoupler le premier élément chauffant annulaire et le second élément chauffant annulaire; et une première unité de support annulaire située entre le premier élément chauffant annulaire et le second élément chauffant annulaire et soutenant le premier élément chauffant annulaire.
(KO)본 발명은 단결정 실리콘 잉곳을 성장시키는 잉곳 성장 장치에 관한 것이다. 본 발명의 일 실시 예에 따른면, 내부 공간을 가지는 성장 챔버와 상기 내부 공간에 위치하며, 실리콘 용액이 수용되는 성장 용기와 상기 성장 용기를 둘러싸며 위치하며 열을 발생시키는 히팅 유닛과 그리고 상기 성장 용기를 지지하는 서셉터를 포함하되 상기 히팅 유닛은 링 형상을 가지는 제1 링히터와 링 형상을 가지며 상기 제1 링히터의 하부에 위치하는 제2 링히터와 상기 제1 링히터와 상기 제2 링히터를 결합시키는 제1 결합부와 그리고 상기 제1 링히터와 상기 제2 링히터의 사이에 위치하며, 상기 제1 링히터를 지지하는 제1 링지지부를 포함하는 잉곳 성장 장치를 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)