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1. (WO2018101732) BLOCK COPOLYMER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/101732 International Application No.: PCT/KR2017/013793
Publication Date: 07.06.2018 International Filing Date: 29.11.2017
IPC:
C08F 220/18 (2006.01) ,C08F 297/02 (2006.01) ,C08F 220/22 (2006.01) ,C08F 220/38 (2006.01) ,C08J 5/22 (2006.01) ,H01L 21/027 (2006.01) ,H01L 21/311 (2006.01) ,G03F 1/00 (2006.01)
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
12
of monohydric alcohols or phenols
16
of phenols or of alcohols containing two or more carbon atoms
18
with acrylic or methacrylic acids
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
297
Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
02
using a catalyst of the anionic type
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
22
Esters containing halogen
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
38
Esters containing sulfur
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
J
WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H142
5
Manufacture of articles or shaped materials containing macromolecular substances
20
Manufacture of shaped structures of ion-exchange resins
22
Films, membranes or diaphragms
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105
After-treatment
311
Etching the insulating layers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Applicants:
주식회사 엘지화학 LG CHEM, LTD. [KR/KR]; 서울시 영등포구 여의대로 128 128, Yeoui-daero, Yeongdeungpo-gu, Seoul 07336, KR
Inventors:
유형주 RYU, Hyung Ju; KR
이제권 LEE, Je Gwon; KR
구세진 KU, Se Jin; KR
최은영 CHOI, Eun Young; KR
윤성수 YOON, Sung Soo; KR
박노진 PARK, No Jin; KR
김정근 KIM, Jung Keun; KR
이미숙 LEE, Mi Sook; KR
Agent:
특허법인 다나 DANA PATENT LAW FIRM; 서울시 강남구 역삼로 3길 11 광성빌딩 신관 5층 5th Floor, New Wing, Gwangsung Bldg., 11, Yeoksam-ro 3-gil, Gangnam-gu, Seoul 06242, KR
Priority Data:
10-2016-016213030.11.2016KR
Title (EN) BLOCK COPOLYMER
(FR) COPOLYMÈRE BLOC
(KO) 블록 공중합체
Abstract:
(EN) The present application may provide a block copolymer and a use thereof. The block copolymer of the present application has excellent self-assembly properties or phase separation characteristics, and can be freely assigned various required functions.
(FR) La présente invention concerne un copolymère bloc et son utilisation. Le copolymère bloc de la présente invention présente d'excellentes propriétés d'auto-assemblage ou de séparation de phase, et peut être librement attribué à diverses fonctions requises.
(KO) 본 출원은, 블록 공중합체 및 그 용도가 제공될 수 있다. 본 출원의 블록 공중합체는, 우수한 자기 조립 특성 내지는 상분리 특성을 가지며, 요구되는 다양한 기능도 자유롭게 부여될 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)