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1. (WO2018101716) LUMINESCENT COMPOSITION, QUANTUM DOTS, AND PREPARATION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/101716 International Application No.: PCT/KR2017/013740
Publication Date: 07.06.2018 International Filing Date: 29.11.2017
IPC:
H01L 33/06 (2010.01) ,H01L 33/18 (2010.01) ,H01L 33/00 (2010.01) ,H01L 29/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
16
with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
18
within the light emitting region
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
Applicants:
주식회사 나노스퀘어 NANOSQUARE CO. LTD. [KR/KR]; 서울시 관악구 관악로 1 1, Gwanak-ro Gwanak-gu Seoul 08826, KR
Inventors:
이선형 LEE, Sun Hyoung; KR
이혁재 LEE, Hyeok Jae; KR
Agent:
곽현규 KWAK, Hyun Kyu; KR
Priority Data:
10-2016-016045129.11.2016KR
Title (EN) LUMINESCENT COMPOSITION, QUANTUM DOTS, AND PREPARATION METHOD THEREFOR
(FR) COMPOSITION LUMINESCENTE, POINTS QUANTIQUES, ET LEUR PROCÉDÉ DE PRÉPARATION
(KO) 발광 조성물, 양자점 및 이의 제조방법
Abstract:
(EN) Provided are: a luminescent composition comprising nanostructures; and, in particular, highly luminescent quantum dots. The nanostructures have a high luminescent quantum yield, emit light at a specific wavelength in a specific implementation embodiment, and have a narrow size distribution. In addition, provided is a method for producing the highly luminescent nanostructures, wherein the method includes a technique for synthesizing a shell alloy of a nanostructure core using indium.
(FR) L’invention concerne : une composition luminescente comprenant des nanostructures ; et, en particulier, des points quantiques hautement luminescents. Les nanostructures ont un haut rendement quantique de luminescence, émettent de la lumière à une longueur d’onde spécifique selon un mode de réalisation de mise en œuvre spécifique, et ont une répartition étroite de taille. Par ailleurs, l’invention concerne un procédé de production des nanostructures hautement luminescentes, le procédé consistant en une technique de synthèse d’un alliage de coque d’un noyau de nanostructure utilisant de l’indium.
(KO) 나노구조를 포함하는 발광 조성물, 특히 고도 발광 양자점이 제공된다. 나노구조는 고 발광 양자 수율을 갖고 특정 구현예에서 특정 파장에서 빛을 방출하고 좁은 크기 분포를 갖는다. 이러한 고도 발광 나노구조를 제조하는 방법이 또한 제공되며, 이에는 인듐을 이용한 나노구조 코어의 쉘 얼로이 합성기술이 포함된다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)