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1. (WO2018101616) LIGHT EMITTING DIODE HAVING PLURALITY OF LIGHT EMITTING CELLS
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Pub. No.: WO/2018/101616 International Application No.: PCT/KR2017/012294
Publication Date: 07.06.2018 International Filing Date: 02.11.2017
IPC:
H01L 27/15 (2006.01) ,H01L 33/62 (2010.01) ,H01L 33/10 (2010.01) ,H01L 33/60 (2010.01) ,H01L 33/40 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15
including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
60
Reflective elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
40
Materials therefor
Applicants:
서울바이오시스주식회사 SEOUL VIOSYS CO., LTD. [KR/KR]; 경기도 안산시 단원구 산단로 163번길 65-16 65-16, Sandan-ro 163beon-gil, Danwon-gu Ansan-si Gyeonggi-do 15429, KR
Inventors:
오세희 OH, Se Hee; KR
김현아 KIM, Hyun A; KR
김종규 KIM, Jong Kyu; KR
채종현 CHAE, Jong Hyeon; KR
Agent:
특허법인에이아이피 AIP PATENT & LAW FIRM; 서울시 강남구 테헤란로 14길 30-1 30-1, Teheran-ro 14-gil, Gangnam-gu Seoul 06239, KR
Priority Data:
10-2016-016100630.11.2016KR
10-2017-001798009.02.2017KR
10-2017-014140727.10.2017KR
Title (EN) LIGHT EMITTING DIODE HAVING PLURALITY OF LIGHT EMITTING CELLS
(FR) DIODE ÉLECTROLUMINESCENTE AYANT UNE PLURALITÉ DE CELLULES ÉLECTROLUMINESCENTES
(KO) 복수의 발광셀들을 가지는 발광 다이오드
Abstract:
(EN) A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode, according to one embodiment, comprises: a lower insulation layer covering an ohmic reflection layer; connection parts disposed on the lower insulation layer and connecting light emitting cells; and an upper insulation layer covering the connection parts and the lower insulation layer, wherein an edge of the lower insulation layer is spaced further from an edge of the upper insulation layer than edges of the light emitting cells. Therefore, the lower insulation layer, which is vulnerable to water, can be protected so as to improve reliability of the light emitting diode.
(FR) L'invention concerne une diode électroluminescente comportant une pluralité de cellules électroluminescentes. Une diode électroluminescente, selon un mode de réalisation, comprend : une couche d'isolation inférieure recouvrant une couche de réflexion ohmique; des parties de connexion disposées sur la couche d'isolation inférieure et connectant des cellules électroluminescentes; et une couche d'isolation supérieure recouvrant les parties de connexion et la couche d'isolation inférieure, un bord de la couche d'isolation inférieure étant espacé davantage d'un bord de la couche d'isolation supérieure que les bords des cellules électroluminescentes. Par conséquent, la couche d'isolation inférieure, qui est vulnérable à l'eau, peut être protégée de façon à améliorer la fiabilité de la diode électroluminescente.
(KO) 복수의 발광셀들을 가지는 발광 다이오드가 제공된다. 일 실시예에 따른 발광 다이오드는, 오믹 반사층을 덮는 하부 절연층, 하부 절연층 상에 배치되어 발광셀들을 연결하는 연결부들 및 상기 연결부들과 하부 절연층을 덮는 상부 절연층을 포함하는데, 하부 절연층의 가장자리가 발광셀의 가장자리보다 상부 절연층의 가장자리로부터 더 멀리 이격된다. 이에 따라, 수분에 취약한 하부 절연층을 보호할 수 있어 발광 당이오드의 신뢰성을 향상시킬 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)