Search International and National Patent Collections
|1. (WO2018101471) ELECTROCONDUCTIVE BONDING MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE|
|Applicants:||TANAKA KIKINZOKU KOGYO K.K.
|Title:||ELECTROCONDUCTIVE BONDING MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE|
The present invention provides an electroconductive bonding material with which it is possible to form a bonding layer having an extremely low void ratio at a low application of pressure, and which has high bonding strength and heat conductivity. The present invention pertains to an electroconductive bonding material for bonding a chip and an adherend under pressure, the electroconductive bonding material including silver particles, silver compound particles, and a dispersing agent, wherein the weight ratio of the silver particles and the silver compound particles is from 30:70 to 70:30, and the void ratio of the electroconductive bonding material is 15% or less after the chip and the adherend are compressed and bonded for five minutes at 10 MPa and 280°C under atmosphere.