Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018101437) PHASE-VARIABLE MULTIPLIER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/101437 International Application No.: PCT/JP2017/043162
Publication Date: 07.06.2018 International Filing Date: 30.11.2017
IPC:
H03B 19/14 (2006.01) ,H01L 29/82 (2006.01) ,H01L 43/08 (2006.01) ,H03B 15/00 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
B
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
19
Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
06
by means of discharge device or semiconductor device with more than two electrodes
14
by means of a semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
B
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
15
Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using super-conductivity effects
Applicants:
国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 東京都千代田区霞が関1丁目3番1号 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921, JP
Inventors:
常木 澄人 TSUNEGI Sumito; JP
福島 章雄 FUKUSHIMA Akio; JP
久保田 均 KUBOTA Hitoshi; JP
田丸 慎吾 TAMARU Shingo; JP
Priority Data:
2016-23468802.12.2016JP
Title (EN) PHASE-VARIABLE MULTIPLIER
(FR) MULTIPLICATEUR À PHASE VARIABLE
(JA) 位相可変型逓倍器
Abstract:
(EN) A phase-variable multiplier of the present invention is provided with: a multiplier which multiplies a frequency fref of a reference signal by a factor of n; a magnetoresistive element which outputs a high-frequency wave having a pre-synchronization frequency fMR that is equal to a frequency f after synchronization or that can be synchronized therewith; and a bias voltage application mechanism for varying the frequency of the pre-synchronization frequency fMR. As the frequency fref of the reference signal, a frequency (1/n)f that is (1/n) times (n is a natural number of 2 or more, or an inverse thereof) the frequency f after synchronization is injection-locked into the magnetoresistive element, whereby a first high-frequency wave output is output from the multiplier that has a frequency f which is n times the frequency fref of the reference signal, and a second high-frequency wave output is output from the magnetoresistive element that has a synchronized frequency f. By varying the pre-synchronization frequency fMR by means of the bias voltage application mechanism, the phase of the second high-frequency wave output can be changed with respect to the phase of the first high-frequency wave output.
(FR) La présente invention concerne un multiplicateur à phase variable qui est pourvu : d'un multiplicateur qui multiplie une fréquence fref d'un signal de référence par un facteur de n ; d'un élément magnéto-résistif qui émet une onde haute fréquence d'une fréquence de pré-synchronisation fMR égale à une fréquence f après synchronisation ou pouvant être synchronisée avec ladite fréquence f ; d'un mécanisme d'application de tension de polarisation destiné à faire varier la fréquence de la fréquence de pré-synchronisation fMR. En tant que fréquence fref du signal de référence, une fréquence (1/n) f qui est (1/n) fois (n étant un nombre naturel supérieur ou égal à 2, ou un inverse de ce dernier) la fréquence f après synchronisation est verrouillée par injection dans l'élément magnéto-résistif. Ainsi, une première sortie d'onde haute fréquence d'une fréquence f qui est n fois la fréquence fref du signal de référence est émise par le multiplicateur, et une seconde sortie d'onde haute fréquence ayant une fréquence synchronisée f est émise par l'élément magnéto-résistif. En faisant varier la fréquence de pré-synchronisation fMR au moyen du mécanisme d'application de tension de polarisation, la phase de la seconde sortie d'onde haute fréquence peut être modifiée par rapport à la phase de la première sortie d'onde haute fréquence.
(JA) 本発明の位相可変型逓倍器は、基準信号の周波数frefをn倍に逓倍する逓倍器と、同期後の周波数fに等しいか又は同期可能な同期前周波数fMRを持つ高周波を出力する磁気抵抗素子と、同期前周波数fMRの周波数を変えるためのバイアス電圧印加機構とを備える。基準信号の周波数frefとして同期後の周波数fの(1/n)倍(nは2以上の自然数又はその逆数)の周波数(1/n)fを磁気抵抗素子に注入同期することにより、逓倍器から基準信号の周波数frefのn倍の周波数fを持つ第1の高周波出力が出力され、磁気抵抗素子から同期された周波数fを持つ第2の高周波出力が出力され、バイアス電圧印加機構によって同期前周波数fMRを変えることにより、第1の高周波出力の位相に対して第2の高周波出力の位相を変えることができる。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)