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1. (WO2018101386) PHASE-MODULATED HIGH FREQUENCY OSCILLATOR ARRAY
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/101386 International Application No.: PCT/JP2017/042972
Publication Date: 07.06.2018 International Filing Date: 30.11.2017
IPC:
H03B 15/00 (2006.01) ,H01L 29/82 (2006.01) ,H03B 19/00 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
B
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
15
Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using super-conductivity effects
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
B
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
19
Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
Applicants:
国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 東京都千代田区霞が関1丁目3番1号 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921, JP
株式会社デンソー DENSO CORPORATION [JP/JP]; 愛知県刈谷市昭和町1丁目1番地 1-1, Showa-cho, Kariya-city, Aichi 4488661, JP
国立大学法人東北大学 TOHOKU UNIVERSITY [JP/JP]; 宮城県仙台市青葉区片平二丁目1番1号 2-1-1, Katahira, Aoba-ku, Sendai-shi, Miyagi 9808577, JP
Inventors:
常木 澄人 TSUNEGI, Sumito; JP
福島 章雄 FUKUSHIMA, Akio; JP
田丸 慎吾 TAMARU, Shingo; JP
久保田 均 KUBOTA, Hitoshi; JP
水沼 広太朗 MIZUNUMA, Kotaro; JP
河野 欣 KONO, Yasushi; JP
磯部 良彦 ISOBE, Yoshihiko; JP
鈴木 和也 SUZUKI, Kazuya; JP
水上 成美 MIZUKAMI, Shigemi; JP
Agent:
稲葉 良幸 INABA, Yoshiyuki; JP
大貫 敏史 ONUKI, Toshifumi; JP
Priority Data:
2016-23493902.12.2016JP
Title (EN) PHASE-MODULATED HIGH FREQUENCY OSCILLATOR ARRAY
(FR) RÉSEAU D'OSCILLATEURS HAUTE FRÉQUENCE À MODULATION DE PHASE
(JA) 位相変調高周波発振器アレイ
Abstract:
(EN) Proposed is a phase-modulated high frequency oscillator array capable of varying a phase difference between a plurality of output signals as desired. The phase-modulated high frequency oscillator array 10 is provided with: a reference signal source 20 which outputs a reference signal having a frequency that is n times or 1/n times an oscillation frequency f; a plurality of magnetoresistive elements 31 with oscillation frequencies aligned with f by injection-locking; a plurality of bias voltage application mechanisms 32 which, by varying a bias voltage applied to at least two magnetoresistive elements 31 that are selected from the plurality of magnetoresistive elements 31 as desired, varies a phase difference between output signals from the at least two magnetoresistive elements 31; and a plurality of removal means 40 which remove the reference signal entering a signal path for transmitting respective output signals from the plurality of magnetoresistive elements 31.
(FR) L'invention concerne un réseau d'oscillateurs haute fréquence à modulation de phase apte à faire varier une différence de phase entre une pluralité de signaux de sortie selon les besoins. Le réseau d'oscillateurs haute fréquence à modulation de phase (10) comprend : une source de signal de référence (20) qui fournit un signal de référence ayant une fréquence qui est n fois ou 1/n fois une fréquence d'oscillation f; une pluralité d'éléments magnétorésistifs (31) ayant des fréquences d'oscillation alignées avec f par verrouillage par injection; une pluralité de mécanismes d'application de tension de polarisation (32) qui, en faisant varier une tension de polarisation appliquée à au moins deux éléments magnétorésistifs (31) qui sont sélectionnés parmi la pluralité d'éléments magnétorésistifs (31) comme souhaité, fait varier une différence de phase entre des signaux de sortie à partir desdits éléments magnétorésistifs (31); et une pluralité de moyens d'élimination (40) qui éliminent le signal de référence entrant dans un trajet de signal pour transmettre des signaux de sortie respectifs à partir de la pluralité d'éléments magnétorésistifs (31).
(JA) 複数の出力信号間の位相差を任意に変えることのできる位相変調高周波発振器アレイを提案する。位相変調高周波発振器アレイ10は、発振周波数fのn倍又は1/n倍の周波数を有する基準信号を出力する基準信号源20と、注入同期により発振周波数がfに一致している複数の磁気抵抗素子31と、複数の磁気抵抗素子31のうち任意に選択される少なくとも二つの磁気抵抗素子31に印加されるバイアス電圧を変えることにより少なくとも二つの磁気抵抗素子31からの出力信号間の位相差を変える複数のバイアス電圧印加機構32と、複数の磁気抵抗素子31のそれぞれからの出力信号を伝達する信号経路に混入する基準信号を除去する複数の除去手段40とを備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)