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1. (WO2018101346) POLYCRYSTALLINE DIAMOND METHOD FOR PRODUCING SAME, SCRIBE TOOL, SCRIBE WHEEL, DRESSER, ROTATING IMPLEMENT, WIRE DRAWING DIE, CUTTING IMPLEMENT, ELECTRODE, AND PROCESSING METHOD IN WHICH POLYCRYSTALLINE DIAMOND IS USED
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Pub. No.: WO/2018/101346 International Application No.: PCT/JP2017/042856
Publication Date: 07.06.2018 International Filing Date: 29.11.2017
IPC:
C01B 32/25 (2017.01) ,B01J 3/06 (2006.01) ,B23B 27/14 (2006.01) ,B23B 27/20 (2006.01) ,C01B 32/205 (2017.01) ,C04B 35/528 (2006.01) ,C04B 41/87 (2006.01) ,C23C 16/26 (2006.01) ,C25B 11/12 (2006.01) ,C30B 29/04 (2006.01)
[IPC code unknown for C01B 32/25]
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
3
Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
06
Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds, dies
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
B
TURNING; BORING
27
Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
14
Cutting tools of which the bits or tips are of special material
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
B
TURNING; BORING
27
Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
14
Cutting tools of which the bits or tips are of special material
20
with diamond bits
[IPC code unknown for C01B 32/205]
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
515
based on non-oxides
52
based on carbon, e.g. graphite
528
obtained from carbonaceous particles with or without other non-organic components
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
41
After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
80
of only ceramics
81
Coating or impregnating
85
with inorganic materials
87
Ceramics
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
26
Deposition of carbon only
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
B
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
11
Electrodes; Manufacture thereof not otherwise provided for
04
characterised by the material
12
Electrodes based on carbon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
04
Diamond
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP
Inventors:
池田 和寛 IKEDA, Kazuhiro; JP
有元 桂子 ARIMOTO, Keiko; JP
山本 佳津子 YAMAMOTO, Katsuko; JP
角谷 均 SUMIYA, Hitoshi; JP
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.; 大阪府大阪市北区中之島三丁目2番4号 中之島フェスティバルタワー・ウエスト Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2016-23235530.11.2016JP
Title (EN) POLYCRYSTALLINE DIAMOND METHOD FOR PRODUCING SAME, SCRIBE TOOL, SCRIBE WHEEL, DRESSER, ROTATING IMPLEMENT, WIRE DRAWING DIE, CUTTING IMPLEMENT, ELECTRODE, AND PROCESSING METHOD IN WHICH POLYCRYSTALLINE DIAMOND IS USED
(FR) DIAMANT POLYCRISTALLIN AINSI QUE PROCÉDÉ DE FABRICATION DE CELUI-CI, OUTIL DE RAINURAGE, ROUE DE RAINURAGE, DRESSEUR, OUTIL ROTATIF, FILIÈRE À ÉTIRER, OUTIL DE COUPE, ÉLECTRODE, ET PROCÉDÉ D’USINAGE METTANT EN ŒUVRE UN DIAMANT POLYCRISTALLIN
(JA) 多結晶ダイヤモンドおよびその製造方法、スクライブツール、スクライブホイール、ドレッサー、回転工具、伸線ダイス、切削工具、電極、ならびに多結晶ダイヤモンドを用いた加工方法
Abstract:
(EN) In the present invention, a diamond single phase is used as the basic structure in a polycrystalline diamond. The polycrystalline diamond comprises a plurality of crystal grains, and contains boron, hydrogen, and oxygen, the remainder comprising carbon and trace impurities. The boron disperses in the crystal grains at the atomic level and at least 90 atom% thereof is present in an isolated substitutional form. The hydrogen and the oxygen are present in the crystal grains as isolated substitutional or interstitial atoms. The crystal grains have a diameter of 500 nm or less, and the surface of the polycrystalline diamond is covered by a protective film.
(FR) Le diamant polycristallin de l’invention présente une monophase de diamant en tant que composition de base, est configuré par une pluralité de grains cristallins, et contient un bore, un hydrogène et un oxygène, le reste consistant en un carbone et des impuretés à l’état de trace. Le bore est dispersé à un niveau atomique dans les grains cristallins, et 90% atomiques ou plus de ce bore sont présents en tant que substitution isolée. L’hydrogène et l’oxygène sont présents en tant que substitution isolée ou position interstitielle dans les grains cristallins. Les grains cristallins présentent un diamètre de grain inférieur ou égal à 500nm. La surface du diamant polycristallin est revêtue par un film protecteur.
(JA) 多結晶ダイヤモンドは、ダイヤモンド単相を基本組成とし、複数の結晶粒により構成され、ホウ素と、水素と、酸素とを含み、残部が炭素および微量不純物であり、ホウ素が結晶粒中に原子レベルで分散しかつその90原子%以上が孤立置換型として存在し、水素および酸素が結晶粒中に孤立置換型または侵入型として存在し、結晶粒はその粒径が500nm以下であり、多結晶ダイヤモンドの表面が保護膜で被覆されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)