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1. (WO2018101278) COATING LIQUID FOR FORMING OXIDE OR OXYNITRIDE INSULATOR FILM, OXIDE OR OXYNITRIDE INSULATOR FILM, FIELD EFFECT TRANSISTOR, AND METHODS FOR MANUFACTURING THESE

Pub. No.:    WO/2018/101278    International Application No.:    PCT/JP2017/042686
Publication Date: Fri Jun 08 01:59:59 CEST 2018 International Filing Date: Wed Nov 29 00:59:59 CET 2017
IPC: H01L 21/318
H01L 21/336
H01L 29/786
Applicants: RICOH COMPANY, LTD.
株式会社リコー
UEDA, Naoyuki
植田 尚之
NAKAMURA, Yuki
中村 有希
ABE, Yukiko
安部 由希子
MATSUMOTO, Shinji
松本 真二
SONE, Yuji
曽根 雄司
SAOTOME, Ryoichi
早乙女 遼一
ARAE, Sadanori
新江 定憲
KUSAYANAGI, Minehide
草柳 嶺秀
ANDO, Yuichi
安藤 友一
Inventors: UEDA, Naoyuki
植田 尚之
NAKAMURA, Yuki
中村 有希
ABE, Yukiko
安部 由希子
MATSUMOTO, Shinji
松本 真二
SONE, Yuji
曽根 雄司
SAOTOME, Ryoichi
早乙女 遼一
ARAE, Sadanori
新江 定憲
KUSAYANAGI, Minehide
草柳 嶺秀
ANDO, Yuichi
安藤 友一
Title: COATING LIQUID FOR FORMING OXIDE OR OXYNITRIDE INSULATOR FILM, OXIDE OR OXYNITRIDE INSULATOR FILM, FIELD EFFECT TRANSISTOR, AND METHODS FOR MANUFACTURING THESE
Abstract:
Provided is a coating liquid for forming an oxide or oxynitride insulator film, the coating liquid containing: element A; at least one of element B and element C; and a solvent, wherein the element A is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the element B is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the element C is at least one selected from the group consisting of elements in group 2 of the periodic table, and the solvent contains at least one selected from the group consisting of water and organic solvents having a flash point of not lower than 21°C but lower than 200°C.