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1. (WO2018101154) LASER IRRADIATION DEVICE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

Pub. No.:    WO/2018/101154    International Application No.:    PCT/JP2017/042107
Publication Date: Fri Jun 08 01:59:59 CEST 2018 International Filing Date: Thu Nov 23 00:59:59 CET 2017
IPC: H01L 21/20
H01L 21/336
H01L 29/786
Applicants: V TECHNOLOGY CO., LTD.
株式会社ブイ・テクノロジー
Inventors: MIZUMURA Michinobu
水村 通伸
ARAI Toshinari
新井 敏成
HATANAKA Makoto
畑中 誠
TAKESHITA Takuro
竹下 琢郎
Title: LASER IRRADIATION DEVICE AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
Abstract:
The laser irradiation device according to one embodiment of the present invention is provided with: a light source that generates a laser beam; a projection lens for irradiating a predetermined region of an amorphous silicon thin film with the laser beam, said amorphous silicon thin film being adhered to each of a plurality of thin film transistors on a glass substrate; and a projection mask pattern, which is provided on the projection lens, and which includes a plurality of masks, in which transmissivities, i.e., the rates at which the laser beam passes through, are set. Through each of the masks included in the projection mask pattern, the projection lens applies the laser beam to the thin film transistors on the glass substrate moving in the predetermined direction, and in each of the masks included in the projection mask pattern, any one of the transmissivities is set.