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1. (WO2018101089) LIQUID CRYSTAL DEVICE, METHOD FOR MEASURING RESIDUAL DC VOLTAGE IN LIQUID CRYSTAL DEVICE, METHOD FOR DRIVING LIQUID CRYSTAL DEVICE, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DEVICE
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Pub. No.: WO/2018/101089 International Application No.: PCT/JP2017/041529
Publication Date: 07.06.2018 International Filing Date: 17.11.2017
IPC:
G02F 1/13 (2006.01) ,G02F 1/1368 (2006.01) ,H01L 21/336 (2006.01) ,H01L 29/786 (2006.01) ,H01Q 3/34 (2006.01) ,H01Q 3/44 (2006.01) ,H01Q 13/22 (2006.01) ,H01Q 21/06 (2006.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
3
Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an aerial or aerial system
26
varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
30
varying the phase
34
by electrical means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
3
Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an aerial or aerial system
44
varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
13
Waveguide horns or mouths; Slot aerials; Leaky-waveguide aerials; Equivalent structures causing radiation along the transmission path of a guided wave
20
Non-resonant leaky-waveguide or transmission-line aerials; Equivalent structures causing radiation along the transmission path of a guided wave
22
Longitudinal slot in boundary wall of waveguide or transmission line
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
21
Aerial arrays or systems
06
Arrays of individually energised aerial units similarly polarised and spaced apart
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
水崎 真伸 MIZUSAKI Masanobu; --
Agent:
奥田 誠司 OKUDA Seiji; JP
Priority Data:
2016-23099429.11.2016JP
Title (EN) LIQUID CRYSTAL DEVICE, METHOD FOR MEASURING RESIDUAL DC VOLTAGE IN LIQUID CRYSTAL DEVICE, METHOD FOR DRIVING LIQUID CRYSTAL DEVICE, AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DEVICE
(FR) DISPOSITIF À CRISTAUX LIQUIDES, PROCÉDÉ DE MESURE DE TENSION CC RÉSIDUELLE DANS UN DISPOSITIF À CRISTAUX LIQUIDES, PROCÉDÉ DE COMMANDE DE DISPOSITIF À CRISTAUX LIQUIDES ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À CRISTAUX LIQUIDES
(JA) 液晶装置、液晶装置の残留DC電圧値を求める方法、液晶装置の駆動方法、および液晶装置の製造方法
Abstract:
(EN) The present invention provides a method for measuring a residual DC voltage in a liquid crystal device, the liquid crystal device comprising an active region (R1) including a plurality of liquid crystal capacitors and a plurality of thin film transistors (TFT) and an inactive region (R2) located in a region excluding the active region and having at least one monitor capacitor (MVr1), with the plurality of liquid crystal capacitors and the at least one monitor capacitor including a liquid crystal layer. The method for measuring a residual DC voltage in a liquid crystal device comprises: a step of creating a V-I curve by measuring a current flowing in one electrode in a pair of electrodes included in the at least one monitor capacitor while applying a positive-negative symmetrical triangular wave voltage to the other electrode; a step of measuring a voltage Vmax having a maximum absolute value where a current reaches a positive local maximum value or local minimum value in the V-I curve, and a voltage Vmin having a maximum absolute value where a current reaches a negative local minimum value or local maximum value; and a step of measuring one-half of the sum of the Vmax and Vmin as the residual DC voltage.
(FR) La présente invention concerne un procédé de mesure d’une tension CC résiduelle dans un dispositif à cristaux liquides, le dispositif à cristaux liquides comprenant une région active (R1) comprenant une pluralité de condensateurs à cristaux liquides et une pluralité de transistors à couche mince (TFT) et une région inactive (R2) située dans une région excluant la région active et comportant au moins un condensateur de surveillance (MVr1), la pluralité de condensateurs à cristaux liquides et l’au moins un condensateur de surveillance comprenant une couche de cristaux liquides. Le procédé de mesure d’une tension CC résiduelle dans un dispositif à cristaux liquides comprend : une étape de génération d’une courbe V-I par mesure d’un courant circulant dans une électrode dans une paire d’électrodes comprises dans ledit au moins un condensateur de surveillance tout en appliquant une tension d’onde triangulaire symétrique positive-négative à l’autre électrode ; une étape de mesure d’une tension Vmax ayant une valeur absolue maximale à laquelle un courant atteint une valeur maximale locale positive ou une valeur minimale locale dans la courbe V-I, et une tension Vmin ayant une valeur absolue maximale à laquelle un courant atteint une valeur minimale locale négative ou une valeur maximale locale ; et une étape de mesure de la moitié de la somme de Vmax et Vmin en tant que tension CC résiduelle.
(JA) 液晶装置の残留DC電圧値を求める方法は、複数の液晶容量および複数のTFTとを有するアクティブ領域(R1)と、アクティブ領域以外の領域に位置し、少なくとも1つのモニター用容量(MVr1)を有する非アクティブ領域(R2)とを備え、複数の液晶容量および少なくとも1つのモニター用容量は、液晶層を含む、液晶装置の残留DC電圧値を求める方法であって、少なくとも1つのモニター用容量が有する一対の電極の内の一方の電極に正負対称な三角波電圧を印加しながら、他方の電極に流れる電流を測定することによって、V-I曲線を生成する工程と、V-I曲線において、電流値が正の極大値または極小値を取る最も絶対値の大きい電圧値Vmaxと、電流値が負の極小値または極大値を取る最も絶対値の大きい電圧値Vminとを求める工程と、VmaxとVminとの和の2分の1を残留DC電圧値として求める工程とを包含する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)