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1. (WO2018101084) GAS BARRIER FILM AND FLEXIBLE ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/101084 International Application No.: PCT/JP2017/041452
Publication Date: 07.06.2018 International Filing Date: 17.11.2017
IPC:
B32B 9/00 (2006.01) ,C23C 16/42 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/02 (2006.01) ,H05B 33/04 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9
Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42
Silicides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
04
Sealing arrangements
Applicants:
住友化学株式会社 SUMITOMO CHEMICAL COMPANY, LIMITED [JP/JP]; 東京都中央区新川二丁目27番1号 27-1, Shinkawa 2-chome, Chuo-ku, Tokyo 1048260, JP
Inventors:
伊藤 豊 ITO, Yutaka; JP
山下 恭弘 YAMASHITA, Yasuhiro; JP
Agent:
中山 亨 NAKAYAMA, Tohru; JP
坂元 徹 SAKAMOTO, Toru; JP
Priority Data:
2016-23102829.11.2016JP
Title (EN) GAS BARRIER FILM AND FLEXIBLE ELECTRONIC DEVICE
(FR) FILM BARRIÈRE AUX GAZ ET DISPOSITIF ÉLECTRONIQUE SOUPLE
(JA) ガスバリア性フィルム及びフレキシブル電子デバイス
Abstract:
(EN) The objective of the present invention is to provide a gas barrier film in which the reduction of gas barrier properties over time, especially at high temperatures and in high humidity, is suppressed. The present invention pertains to a gas barrier film having at least an inorganic thin-film layer and a base material layer, which includes at least a flexible base material, wherein the adhesion between the base material layer and the inorganic thin-film layer is 2B or greater measured in accordance with ASTM D3359, the inorganic thin-film layer has at least one cut end face, and has at least one defect selected from the group comprising peeling and cracking, or does not have said defect, where if the inorganic thin-film layer has said defect, the region in which the defect is present is within 120 μm or less in the normal direction from the cut end face.
(FR) L'objectif de la présente invention est de produire un film barrière aux gaz permettant de supprimer la réduction des propriétés de barrière aux gaz au fil du temps, en particulier à des températures élevées et en humidité élevée. La présente invention concerne un film barrière aux gaz comportant au moins une couche de film mince inorganique et une couche de matériau de base, comprenant au moins un matériau de base souple, l'adhésion entre la couche de matériau de base et la couche de film mince inorganique étant d'au moins 2B mesurée en fonction de ASTM D3359, la couche de film mince inorganique comportant au moins une face d'extrémité coupée, et comportant au moins un défaut choisi dans le groupe constitué par le pelage et le craquelage, ou ne comportant pas ledit défaut, la région dans laquelle le défaut est présent, si la couche de film mince inorganique comporte ledit défaut, étant située à 120 μm ou moins dans la direction normale de la face d'extrémité coupée.
(JA) 特に高温高湿下での経時的なガスバリア性の低下が抑制されたガスバリア性フィルムを提供することを目的とする。 本発明は、可撓性基材を少なくとも含む基材層と、無機薄膜層とを少なくとも有するガスバリア性フィルムであって、該基材層と該無機薄膜層との間の密着性はASTM D3359に従い測定して2B以上であり、該無機薄膜層は少なくとも1つの切断端面を有し、剥離及びひび割れからなる群から選択される少なくとも1つの欠陥を有するか、又は、該欠陥を有さず、ここで、該無機薄膜層が該欠陥を有する場合、その存在領域は、該切断端面から法線方向に120μm以下の範囲内であるガスバリア性フィルムに関する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)