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1. (WO2018101028) SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, METHOD OF MANUFACTURING SAME, MAGNETO RESISTIVE SENSOR, AND MAGNETIC MEMORY
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/101028 International Application No.: PCT/JP2017/040910
Publication Date: 07.06.2018 International Filing Date: 14.11.2017
IPC:
H01L 29/82 (2006.01) ,G11B 5/39 (2006.01) ,H01L 21/8239 (2006.01) ,H01L 27/105 (2006.01) ,H01L 43/08 (2006.01) ,H01L 43/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127
Structure or manufacture of heads, e.g. inductive
33
Structure or manufacture of flux-sensitive heads
39
using magneto-resistive devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都港区芝浦三丁目9番1号 3-9-1, Shibaura, Minato-ku, Tokyo 1080023, JP
Inventors:
塩川 陽平 SHIOKAWA Yohei; JP
佐々木 智生 SASAKI Tomoyuki; JP
及川 亨 OIKAWA Tohru; JP
Agent:
棚井 澄雄 TANAI Sumio; JP
荒 則彦 ARA Norihiko; JP
飯田 雅人 IIDA Masato; JP
荻野 彰広 OGINO Akihiro; JP
Priority Data:
2016-23532702.12.2016JP
Title (EN) SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, METHOD OF MANUFACTURING SAME, MAGNETO RESISTIVE SENSOR, AND MAGNETIC MEMORY
(FR) ÉLÉMENT D'INVERSION DE MAGNÉTISATION DE COURANT DE SPIN, SON PROCÉDÉ DE FABRICATION, CAPTEUR MAGNÉTORÉSISTIF ET MÉMOIRE MAGNÉTIQUE
(JA) スピン流磁化反転素子とその製造方法、磁気抵抗効果素子、磁気メモリ
Abstract:
(EN) This spin current magnetization reversal element comprises a first ferromagnetic metal layer having a variable direction of magnetization; and a spin-orbit torque wire that bonds to the first ferromagnetic metal layer and extends in a direction intersecting a facing direction of the first ferromagnetic metal layer. The spin-orbit torque wire is made of a non-magnetic body composed of two or more types of elements, and a composition ratio of the non-magnetic body has a non-uniform distribution between a first surface of the wire bonded to the first ferromagnetic metal layer and a second surface thereof positioned on a side opposite thereto.
(FR) L'invention concerne un élément d'inversion de magnétisation de courant de spin comprenant une première couche de métal ferromagnétique ayant une direction de magnétisation variable; et un fil de couple de spin-orbite qui se lie à la première couche de métal ferromagnétique et s'étend dans une direction croisant une direction de face de la première couche de métal ferromagnétique. Le fil de couple spin-orbite est constitué d'un corps non magnétique composé d'au moins deux types d'éléments, et un rapport de composition du corps non magnétique a une distribution non uniforme entre une première surface du fil lié à la première couche métallique ferromagnétique et une seconde surface de celui-ci positionnée sur un côté opposé à celle-ci.
(JA) 本発明のスピン流磁化反転素子は、磁化の向きが可変な第1強磁性金属層と、前記第1強磁性金属層に接合し、前記第1強磁性金属層の面直方向に対して交差する方向に延在するスピン軌道トルク配線と、を備え、前記スピン軌道トルク配線が、2種類以上の元素からなる非磁性体で構成され、前記第1強磁性金属層と接合する第1面とその反対側に位置する第2面との間で、前記非磁性体の組成比が不均一な分布を有している。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)