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1. (WO2018100958) MASK BLANK, MASK FOR TRANSFER, METHOD FOR MANUFACTURING MASK FOR TRANSFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/100958    International Application No.:    PCT/JP2017/039518
Publication Date: Fri Jun 08 01:59:59 CEST 2018 International Filing Date: Thu Nov 02 00:59:59 CET 2017
IPC: G03F 1/54
G03F 1/32
G03F 1/72
H01L 21/3065
Applicants: HOYA CORPORATION
HOYA株式会社
HOYA ELECTRONICS SINGAPORE PTE. LTD.
ホーヤ エレクトロニクス シンガポール プライベート リミテッド
Inventors: HASHIMOTO, Masahiro
橋本 雅広
UCHIDA, Mariko
内田 真理子
KAWASUMI, Isao
河角 功
Title: MASK BLANK, MASK FOR TRANSFER, METHOD FOR MANUFACTURING MASK FOR TRANSFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
Provided is a mask blank of which the correction rate of EB defect correction is sufficiently fast even when a thin film for forming a transfer pattern is formed with an SiN material, and the ratio of correction rate for EB defect correction between a translucent substrate and itself is sufficiently high. A mask blank provided with a thin film for forming, on a translucent substrate, a transfer pattern formed with a material containing silicon and nitrogen, characterized in that when X-ray photoelectron spectrometry is performed on a plurality of measurement spots in an internal area of the thin film except a near-field area and a surface area to acquire an average value PSi_fi_av of the maximum peak PSi_fi of photoelectron intensity of an Si2p narrow spectrum, and X-ray photoelectron spectrometry is performed on a plurality of measurement spots of the translucent substrate to acquire an average value PSi_sb_av of the maximum peak PSi_sb of photoelectron intensity of an Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or greater.