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1. (WO2018100496) STRAIN-INDUCED TOPOLOGICAL TRANSFORMATION OF THERMOELECTRIC RESPONSIVE THIN FILMS

Pub. No.:    WO/2018/100496    International Application No.:    PCT/IB2017/057467
Publication Date: Fri Jun 08 01:59:59 CEST 2018 International Filing Date: Wed Nov 29 00:59:59 CET 2017
IPC: H01L 35/34
H01L 35/32
Applicants: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
Inventors: SINGH, Devendra
HUSSAIN, Muhammad Mustafa
Title: STRAIN-INDUCED TOPOLOGICAL TRANSFORMATION OF THERMOELECTRIC RESPONSIVE THIN FILMS
Abstract:
A three-dimensional structure may be obtained from a two-dimensional thin film by applying a stressor layer to the two-dimensional thin film and releasing the thin film from a support substrate. Such a three-dimensional structure may include a thermoelectric responsive material for forming a thermoelectric generator (TEG). A manufacturing process for the transformation from 2-D to 3-D may use a polymer stressor layer deposited on the thermoelectric responsive thin film. The combination thermoelectric responsive layer and stressor layer can be released from a carrier, after which the stressor layer causes the thermoelectric responsive layer to curl. The curl can cause the thermoelectric responsive layer to roll up during the release from the carrier to form a tubular structure.