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1. (WO2018100380) SWITCHING DEVICE FORMED FROM CORRELATED ELECTRON MATERIAL
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Pub. No.: WO/2018/100380 International Application No.: PCT/GB2017/053614
Publication Date: 07.06.2018 International Filing Date: 30.11.2017
IPC:
H01L 45/00 (2006.01) ,H01L 27/24 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24
including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
Applicants: ARM LTD[GB/GB]; 110 Fulbourn Road Cambridge CB1 9NJ, GB
Inventors: ARAUJO, Carlos Alberto Paz de; GB
CELINSKA, Jolanta Bozena; GB
REID, Kimberly Gay; GB
SHIFREN, Lucian; GB
Agent: TLIP LTD; 14 King Street Leeds LS1 2HL, GB
Priority Data:
15/367,05201.12.2016US
Title (EN) SWITCHING DEVICE FORMED FROM CORRELATED ELECTRON MATERIAL
(FR) DISPOSITIF DE COMMUTATION FORMÉ D'UN MATÉRIAU À ÉLECTRONS CORRÉLÉS
Abstract:
(EN) The present techniques generally relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces (222) may be formed on or over an insulating material (210). Responsive to forming voids (230) in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents (221), which may convert the localized portions (240) of the conductive traces to a CEM. In embodiments, an electrode material (250) may be deposited within the voids to contact the localized portion (240) of conductive trace converted to the CEM.
(FR) Les présentes techniques concernent globalement la fabrication d'un commutateur en matériau à électrons corrélés (CEM). Selon certains modes de réalisation, l'invention concerne des traitements selon lesquels il est possible de former des traces conductrices (222) sur ou par-dessus un matériau isolant (210). En réponse à la formation de vides (230) dans le matériau isolant, des parties localisées des traces conductrices en contact avec les vides peuvent être exposées à des agents gazeux oxydants (221), qui peuvent convertir les parties localisées (240) des traces conductrices en CEM. Selon certains autres modes de réalisation, un matériau d'électrode (250) peut être déposé à l'intérieur des vides de façon à contacter la partie localisée (240) de trace conductrice convertie en CEM.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)