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|1. (WO2018100205) OPTOELECTRONIC COMPONENT WITH IMPROVED ABSORPTION|
|Applicants:||CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
INSTITUT PHOTOVOLTAIQUE D'ILE DE FRANCE (IPVF)
|Title:||OPTOELECTRONIC COMPONENT WITH IMPROVED ABSORPTION|
According to one aspect, the invention relates to an optoelectronic component (30) having a front side (35), and comprising: a set of layers (3) that make contact, said set of layers including at least one optoelectronic conversion layer (3) that is formed from an absorbent material of given gap; at least one first and one second electrical contacts (73) that are suitable for collecting or injecting charge into the optoelectronic conversion layer; and a reflective layer (32) with a first side forming a back side (36) of the component, which face is located opposite the front side. The reflective layer has a second side making contact with said set of layers (31), said second side being nanostructured over a thickness (hg) smaller than one micron in order to form a set of reflective islands (323) and of nanocavities (322) between the reflective islands, the maximum dimension of a nanocavity or of a reflective island and the maximum distance between two nanocavities or two reflective islands being smaller than one micron; and the nanocavities are filled with a dielectric material doped with at least one first optically active compound that is suitable for at least one first photo-conversion from a first spectral band to a second spectral band, the second spectral band being at least partially comprised in the absorption spectral band of the optoelectronic conversion layer.