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1. (WO2018100024) SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
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Pub. No.: WO/2018/100024 International Application No.: PCT/EP2017/080903
Publication Date: 07.06.2018 International Filing Date: 30.11.2017
IPC:
C30B 25/18 (2006.01) ,C23C 16/27 (2006.01) ,C30B 25/20 (2006.01) ,C30B 29/04 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
26
Deposition of carbon only
27
Diamond only
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
20
the substrate being of the same materials as the epitaxial layer
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
04
Diamond
Applicants:
ELEMENT SIX TECHNOLOGIES LIMITED [GB/GB]; Global Innovation Centre Fermi Avenue, Harwell Oxford, Didcot Oxfordshire OX11 0QR, GB
Inventors:
TWITCHEN, Daniel James; GB
DHILLON, Harpreet Kaur; GB
KHAN, Rizwan Uddin Ahmad; GB
Agent:
MITCHELL, Matthew Benedict David; GB
REEVE, Anna Elizabeth; GB
ROLLINSON, Gabrielle Mary Joy; GB
Priority Data:
1620413.301.12.2016GB
Title (EN) SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
(FR) MATÉRIAU DE DIAMANT SYNTHÉTIQUE MONOCRISTALLIN OBTENU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR
Abstract:
(EN) There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm;one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm x 1.3 mm and measured using a pixel size of area in a range 1 x 1 µm2 to 20 x 20 µm2, a maximum value of Δn[average] does not exceed 1.5 x 10-4 for the one or more regions of low optical birefringence, where Δn[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness;one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, Δn[average] is greater than 1.5 x 10-4 and less than 3 x 10-3; and wherein every 1.3 mm x 1.3 mm area of the sample of the single crystal CVD diamond material comprises at least one of said regions of high optical birefringence. There is also described a method of making the CVD diamond material.
(FR) L'invention concerne un matériau de diamant monocristallin obtenu par dépôt chimique en phase vapeur (CVD), comprenant trois dimensions orthogonales d'au moins 2 mm ; au moins une zone de faible biréfringence optique, indiquant une faible contrainte, de sorte que, dans un échantillon dudit matériau de diamant doté d'une épaisseur située sur une plage comprise entre 0,5 mm et 1,0 mm et d'une surface supérieure à 1,3 mm x 1,3 mm et mesurée au moyen d'une taille de pixel de surface située sur une plage comprise entre 1 x 1 µm2 et 20 x 20 µm2, une valeur maximale de Δn[moyenne] ne dépasse pas 1,5 x 10-4 pour ladite zone au moins de faible biréfringence optique, Δn[moyenne] étant une valeur moyenne d'une différence entre l'indice de réfraction pour une lumière polarisée parallèlement à des axes lents et rapides moyennée sur l'épaisseur de l'échantillon ; au moins une zone de biréfringence optique élevée, indiquant une contrainte élevée, de sorte que dans ledit échantillon de matériau de diamant moncristallin obtenu par CVD et mesurée au moyen de ladite taille de pixel, Δn[moyenne] soit supérieure à 1,5 x 10-4 et inférieure à 3 x 10-3 ; et chaque zone de 1,3 mm x 1,3 mm de l'échantillon dudit matériau comprenant au moins une desdites zones de biréfringence optique élevée. L'invention concerne également un procédé de fabrication dudit matériau de diamant CVD.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)