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1. (WO2018099306) TFET-INTEGRATED FINFET DEVICE AND PREPARATION METHOD THEREFOR

Pub. No.:    WO/2018/099306    International Application No.:    PCT/CN2017/112354
Publication Date: Fri Jun 08 01:59:59 CEST 2018 International Filing Date: Thu Nov 23 00:59:59 CET 2017
IPC: H01L 27/07
H01L 29/739
H01L 29/78
H01L 21/8232
Applicants: SHANGHAI IC R & D CENTER CO., LTD.
上海集成电路研发中心有限公司
CHENGDU IMAGE DESIGN TECHNOLOGY CO. LTD.
成都微光集电科技有限公司
Inventors: SUN, Deming
孙德明
Title: TFET-INTEGRATED FINFET DEVICE AND PREPARATION METHOD THEREFOR
Abstract:
A TFET-integrated FINFET device and a preparation method therefor. An N type drain region (01) and a source region (02) which is formed by a top P type doped region (021) and a bottom N type doped region (022) are formed on two end regions of a fin structure (Q), respectively, so that the bottom N type doped region (022) on the source region (02), the drain region (01), a channel region (05), a high-K dielectric layer (03) on the side wall of the fin structure (Q), and a gate (04) positioned on the side wall of the fin structure (Q) jointly form an MOS FINFET device; and the top P type doped region (021) on the source region (02), the drain region (01), the channel region (05), the high-K dielectric layer (03) on the top of the fin structure (Q), and the gate (04) positioned on the top of the fin structure (Q) jointly form a TFET device. Integration of a TFET and a FINFET is realized, so that the costs are lowered.