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1. (WO2018099110) SILICON NITRIDE CHEMICAL-MECHANICAL POLISHING SOLUTION

Pub. No.:    WO/2018/099110    International Application No.:    PCT/CN2017/094362
Publication Date: Fri Jun 08 01:59:59 CEST 2018 International Filing Date: Wed Jul 26 01:59:59 CEST 2017
IPC: C09G 1/02
Applicants: ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
安集微电子科技(上海)股份有限公司
Inventors: ZHOU, Wenting
周文婷
Title: SILICON NITRIDE CHEMICAL-MECHANICAL POLISHING SOLUTION
Abstract:
A silicon nitride chemical-mechanical polishing solution, comprising abrasive particles, a compound containing one or more carboxyl groups, and an anionic surfactant containing long alkyl chains. The silicon nitride chemical-mechanical polishing solution can suppress a Teos polishing rate while increasing a SiN polishing rate, has a high SiN/Teos selectivity ratio, and can reduce the defects on the surface of a polished substrate.