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1. (WO2018099080) LAYERED-QUANTUM-DOT LED LAMP-BEAD PACKAGING METHOD
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Pub. No.: WO/2018/099080 International Application No.: PCT/CN2017/091991
Publication Date: 07.06.2018 International Filing Date: 06.07.2017
IPC:
H01L 33/50 (2010.01) ,H01L 33/56 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
56
Materials, e.g. epoxy or silicone resin
Applicants:
深圳市聚飞光电股份有限公司 SHENZHEN JUFEI OPTOELECTRONICS CO., LTD [CN/CN]; 中国广东省深圳市 龙岗区平湖街道鹅公岭社区鹅岭工业区4号C栋1-3楼、E栋 No. 4, E Ling Industrial Area E Gong Ling Community Ping Hu Street, Long Gang District Shenzhen, Guangdong 518000, CN
Inventors:
高丹鹏 GAO, Danpeng; CN
张志宽 ZHANG, Zhikuan; CN
邢其彬 XING, Qibin; CN
龚涛 GONG, Tao; CN
王旭改 WANG, Xugai; CN
Agent:
深圳市精英专利事务所 SHENZHEN TALENT PATENT SERVICE; 中国广东省深圳市 福田区深南中路6009号绿景广场B栋20层B B, 20/F, Building B Lvjing Square 6009 Shennan Middle Road, Futian District Shenzhen, Guangdong 518000, CN
Priority Data:
201611081666.X30.11.2016CN
Title (EN) LAYERED-QUANTUM-DOT LED LAMP-BEAD PACKAGING METHOD
(FR) PROCÉDÉ D'ENCAPSULATION DE PERLE DE LAMPE À DEL À POINTS QUANTIQUES EN COUCHES
(ZH) 一种分层型量子点LED灯珠的封装方法
Abstract:
(EN) Provided is a layered-quantum-dot LED lamp-bead packaging method. The half-wave of the quantum dot material used is narrow, significantly improving the gamut value of the LED lamp bead such that the gamut value of the LED lamp bead reaches NTSC 94% or higher; quantum-dot fluorescent powder and other light-emitting material is injected stepwise into the LED to form a layered structure; it is thus possible to prevent reactions between multiple light-emitting materials during later illumination of the lamp bulb, whereas breaking the structure of the quantum-dot fluorescent powder causes light decay. Such an approach increases the reliability of the LED lamp bead; quantum-dot fluorescent powder is used to obtain a white LED lamp bead; the quantum-dot fluorescent powder has a high excitation efficiency and the density of the fluorescent powder during the packaging process is low, reducing the difficulty of packaging and the product defect rate and making the invention suitable for large-scale industrial production.
(FR) L'invention concerne un procédé d'encapsulation de perle de lampe à DEL à points quantiques en couches. La demi-onde du matériau à points quantiques utilisé est étroite, améliorant significativement la valeur de gamme de la perle de lampe à DEL de telle sorte que la valeur de gamme de la perle de lampe à DEL atteint NTSC 94 % ou plus; de la poudre fluorescente à points quantiques et d'autres matériaux électroluminescent sont injectés par étape dans la DEL pour former une structure en couches; il est ainsi possible d'empêcher des réactions entre de multiples matériaux électroluminescents pendant un éclairage ultérieur de l'ampoule de lampe, tandis que la rupture de la structure de la poudre fluorescente à points quantiques provoque une diminution de la lumière. Une telle approche augmente la fiabilité de la perle de lampe à DEL; une poudre fluorescente à points quantiques est utilisée pour obtenir une perle de lampe à DEL blanche; la poudre fluorescente à points quantiques présente une efficacité d'excitation élevée et la densité de la poudre fluorescente pendant le processus d'encapsulation est faible, réduisant la difficulté d'encapsulation et le taux de défaut de produit et rendant l'invention appropriée pour une production industrielle à grande échelle.
(ZH) 提供一种分层型量子点LED灯珠的封装方法。使用的量子点材料的半波宽较窄,能极大提升LED灯珠的色域值,所得的LED灯珠色域值可达NTSC 94%以上;将量子点荧光粉与其它发光材料分步注入LED中,形成分层的结构;可以避免在灯珠后期点亮过程中,多种发光材料相互反应,而破坏量子点荧光粉的结构,造成光衰。这种做法可以提高LED灯珠的可靠性;采用量子点荧光粉获得白光LED灯珠,由于量子点荧光粉激发效率高,封装作业过程中荧光粉浓度较低,降低了封装作业的难度及产品不良率,适合大批量工业化生产。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)