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|1. (WO2018098952) GAN-BASED EPITAXIAL STRUCTURE, SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREFOR|
|Applicants:||SHANGHAI INDUSTRIAL ΜTECHNOLOGY RESEARCH INSTITUTE
|Title:||GAN-BASED EPITAXIAL STRUCTURE, SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREFOR|
A GaN-based epitaxial structure, a semiconductor device, and a formation method therefor, the GaN-based epitaxial structure comprising: a first GaN layer (100), which is doped with C atoms at a first concentration; a second GaN layer (200), which is doped with C atoms at a second concentration, the second concentration being lower than the first concentration; and a C atom-doping blocking layer (300), which is disposed between the first GaN layer (100) and the second GaN layer (200), and which is configured to block C atoms from diffusing between the first GaN layer (100) and the second GaN layer (200). The present method may achieve a greatly C-doped high impedance GaN layer that is used for buffering, and at the same time, may obtain a low C-doped eigen GaN layer having a small thickness that is used for generating channels.