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1. (WO2018098952) GAN-BASED EPITAXIAL STRUCTURE, SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREFOR

Pub. No.:    WO/2018/098952    International Application No.:    PCT/CN2017/078826
Publication Date: Fri Jun 08 01:59:59 CEST 2018 International Filing Date: Fri Mar 31 01:59:59 CEST 2017
IPC: H01L 29/10
H01L 29/66
H01L 29/778
Applicants: SHANGHAI INDUSTRIAL ΜTECHNOLOGY RESEARCH INSTITUTE
上海新微技术研发中心有限公司
Inventors: CHEN, Long
陈龙
LI, Cheng
李成
YUAN, Li
袁理
Title: GAN-BASED EPITAXIAL STRUCTURE, SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREFOR
Abstract:
A GaN-based epitaxial structure, a semiconductor device, and a formation method therefor, the GaN-based epitaxial structure comprising: a first GaN layer (100), which is doped with C atoms at a first concentration; a second GaN layer (200), which is doped with C atoms at a second concentration, the second concentration being lower than the first concentration; and a C atom-doping blocking layer (300), which is disposed between the first GaN layer (100) and the second GaN layer (200), and which is configured to block C atoms from diffusing between the first GaN layer (100) and the second GaN layer (200). The present method may achieve a greatly C-doped high impedance GaN layer that is used for buffering, and at the same time, may obtain a low C-doped eigen GaN layer having a small thickness that is used for generating channels.