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1. (WO2018089579) SCANDIUM-CONTAINING III-N ETCH-STOP LAYERS FOR SELECTIVE ETCHING OF III-NITRIDES AND RELATED MATERIALS

Pub. No.:    WO/2018/089579    International Application No.:    PCT/US2017/060771
Publication Date: Fri May 18 01:59:59 CEST 2018 International Filing Date: Fri Nov 10 00:59:59 CET 2017
IPC: H01L 21/768
H01L 21/3213
Applicants: THE GOVERMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY
Inventors: HARDY, Matthew, T.
DOWNEY, Brian, P.
MAYER, David, J.
Title: SCANDIUM-CONTAINING III-N ETCH-STOP LAYERS FOR SELECTIVE ETCHING OF III-NITRIDES AND RELATED MATERIALS
Abstract:
A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying layers. The Sc- or Y-containing material layer serves as an etch-stop during fabrication of one or more devices from overlying layers situated above the Sc- or Y-containing material layer. The Sc- or Y-containing material layer can be grown within an epitaxial group Ill-nitride device structure for applications such as electronics, optoelectronics, and acoustoelectronics, and can improve the etch-depth accuracy, reproducibility and uniformity.