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1. (WO2018089536) REMOVAL METHODS FOR HIGH ASPECT RATIO STRUCTURES

Pub. No.:    WO/2018/089536    International Application No.:    PCT/US2017/060696
Publication Date: Fri May 18 01:59:59 CEST 2018 International Filing Date: Thu Nov 09 00:59:59 CET 2017
IPC: H01L 21/3213
B08B 7/00
H01J 37/32
H01L 21/3065
H01L 21/67
Applicants: APPLIED MATERIALS, INC.
Inventors: XU, Lin
CHEN, Zhijun
HUANG, Jiayin
WANG, Anchuan
Title: REMOVAL METHODS FOR HIGH ASPECT RATIO STRUCTURES
Abstract:
Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.