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1. (WO2018088536) METAL FILM-FORMING DEVICE AND METAL FILM-FORMING METHOD
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Pub. No.: WO/2018/088536 International Application No.: PCT/JP2017/040626
Publication Date: 17.05.2018 International Filing Date: 10.11.2017
IPC:
C23C 14/22 (2006.01) ,C23C 14/24 (2006.01) ,C23C 14/34 (2006.01) ,H05H 1/46 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
24
Vacuum evaporation
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1 Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
国立大学法人大阪大学 OSAKA UNIVERSITY [JP/JP]; 大阪府吹田市山田丘1番1号 1-1, Yamadaoka, Suita-shi, Osaka 5650871, JP
Inventors:
大参 宏昌 OHMI Hiromasa; JP
安武 潔 YASUTAKE Kiyoshi; JP
久保田 雄介 KUBOTA Yusuke; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; JP
黒木 義樹 KUROKI Yoshiki; JP
柏岡 潤二 KASHIOKA Junji; JP
Priority Data:
2016-22004710.11.2016JP
Title (EN) METAL FILM-FORMING DEVICE AND METAL FILM-FORMING METHOD
(FR) DISPOSITIF DE FORMATION DE FILM MÉTALLIQUE ET PROCÉDÉ DE FORMATION DE FILM MÉTALLIQUE
(JA) 金属膜形成装置及び金属膜形成方法
Abstract:
(EN) A metal film-forming device which uses the atmospheric-pressure plasma enhanced chemical transport (APECT) method, wherein a control device 7 thereof controls a high-frequency power source 6 and generates hydrogen plasma around a starting material metal 5 when hydrogen is introduced into a treatment vessel 1 through a hydrogen introduction port 4. Thus, it is possible to form a metal film which could not have been formed using the prior art, by configuring in a manner such that a prescribed relationship exists between: the density A of the high-frequency power which the high-frequency power source 6 applies per unit area of the plasma generation region of the starting material metal 5; the distance B between the starting material metal 5 and a substrate S; and the pressure C around the starting material metal 5 inside the treatment vessel 1.
(FR) L'invention concerne un dispositif de formation de film métallique qui utilise le procédé de transport chimique augmenté par plasma à pression atmosphérique (APECT). Ce dispositif comporte un dispositif de commande (7) qui commande une source d'énergie haute fréquence (6) et génère un plasma d'hydrogène autour d'un métal de départ (5) lorsque de l'hydrogène est introduit dans un récipient de traitement (1) par l'intermédiaire d'un orifice d'introduction d'hydrogène (4). Il est ainsi possible de former un film métallique, ce qui n'était pas possible avec les techniques antérieures, en configurant le dispositif d'une manière telle qu'une relation prescrite existe entre : la densité (A) de la puissance haute fréquence que la source de puissance haute fréquence (6) applique par unité de surface de la région de génération de plasma du métal de matériau de départ (5) ; la distance (B) entre le métal de départ (5) et un substrat (S) ; et la pression (C) autour du métal de départ (5) à l'intérieur du récipient de traitement (1).
(JA) 大気圧プラズマ化学輸送(APECT)法を用いた金属膜形成装置において、その制御装置7は、水素導入口4から処理容器1内に水素が導入された場合に、高周波電源6を制御し、原料金属5の周囲に水素プラズマを発生させる。この高周波電源6によって原料金属5のプラズマ発生領域における単位面積当たりに与えられる高周波電力の密度A、原料金属5と基板Sとの間の距離B、処理容器1内の原料金属5の周囲の圧力Cは、所定の関係を有しており、従来では、形成できなかった金属膜を形成できるようになる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)