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1. (WO2018088532) ETCHING DEVICE AND ETCHING METHOD
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Pub. No.: WO/2018/088532 International Application No.: PCT/JP2017/040614
Publication Date: 17.05.2018 International Filing Date: 10.11.2017
IPC:
H01L 21/3065 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1 Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
国立大学法人大阪大学 OSAKA UNIVERSITY [JP/JP]; 大阪府吹田市山田丘1番1号 1-1, Yamadaoka, Suita-shi, Osaka 5650871, JP
Inventors:
大参 宏昌 OHMI Hiromasa; JP
久保田 雄介 KUBOTA Yusuke; JP
Agent:
長谷川 芳樹 HASEGAWA Yoshiki; JP
黒木 義樹 KUROKI Yoshiki; JP
柏岡 潤二 KASHIOKA Junji; JP
Priority Data:
2016-22004810.11.2016JP
Title (EN) ETCHING DEVICE AND ETCHING METHOD
(FR) DISPOSITIF DE GRAVURE ET PROCÉDÉ DE GRAVURE
(JA) エッチング装置及びエッチング方法
Abstract:
(EN) An etching method for emitting plasma which has reactive radicals, wherein the processing gas used to form the plasma contains an etching gas containing H2 gas, and also contains a surface-modifying gas containing one or more types of gas selected from the group consisting of N2, NH3, H2O and CO2, and as a result, it is possible to improve the etching rate and suppress an increase in surface roughness when etching.
(FR) L'invention concerne un procédé de gravure pour émettre un plasma qui a des radicaux réactifs, le gaz de traitement utilisé pour former le plasma contenant un gaz de gravure contenant un gaz H2, et contenant également un gaz de modification de surface contenant un ou plusieurs types de gaz choisis dans le groupe constitué par N2, NH3, H2O et CO2, et en conséquence, il est possible d'améliorer la vitesse de gravure et de supprimer toute augmentation de la rugosité de surface lors de la gravure.
(JA) 反応性ラジカルを有するプラズマを照射するエッチング方法において、プラズマ形成に用いられる処理ガスは、Hガスを含むエッチングガスと、N、NH、HO及びCOからなる群から選択される少なくとも1種のガスを含む表面改質ガスとを含んでおり、エッチングレートを向上すると共にエッチングの際の表面粗さの増加を抑制することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)