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1. (WO2018088532) ETCHING DEVICE AND ETCHING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/088532 International Application No.: PCT/JP2017/040614
Publication Date: 17.05.2018 International Filing Date: 10.11.2017
IPC:
H01L 21/3065 (2006.01) ,H05H 1/46 (2006.01)
Applicants: TOKYO ELECTRON LIMITED[JP/JP]; 3-1 Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
OSAKA UNIVERSITY[JP/JP]; 1-1, Yamadaoka, Suita-shi, Osaka 5650871, JP
Inventors: OHMI Hiromasa; JP
KUBOTA Yusuke; JP
Agent: HASEGAWA Yoshiki; JP
KUROKI Yoshiki; JP
KASHIOKA Junji; JP
Priority Data:
2016-22004810.11.2016JP
Title (EN) ETCHING DEVICE AND ETCHING METHOD
(FR) DISPOSITIF DE GRAVURE ET PROCÉDÉ DE GRAVURE
(JA) エッチング装置及びエッチング方法
Abstract: front page image
(EN) An etching method for emitting plasma which has reactive radicals, wherein the processing gas used to form the plasma contains an etching gas containing H2 gas, and also contains a surface-modifying gas containing one or more types of gas selected from the group consisting of N2, NH3, H2O and CO2, and as a result, it is possible to improve the etching rate and suppress an increase in surface roughness when etching.
(FR) L'invention concerne un procédé de gravure pour émettre un plasma qui a des radicaux réactifs, le gaz de traitement utilisé pour former le plasma contenant un gaz de gravure contenant un gaz H2, et contenant également un gaz de modification de surface contenant un ou plusieurs types de gaz choisis dans le groupe constitué par N2, NH3, H2O et CO2, et en conséquence, il est possible d'améliorer la vitesse de gravure et de supprimer toute augmentation de la rugosité de surface lors de la gravure.
(JA) 反応性ラジカルを有するプラズマを照射するエッチング方法において、プラズマ形成に用いられる処理ガスは、Hガスを含むエッチングガスと、N、NH、HO及びCOからなる群から選択される少なくとも1種のガスを含む表面改質ガスとを含んでおり、エッチングレートを向上すると共にエッチングの際の表面粗さの増加を抑制することができる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)