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1. (WO2018088410) SWITCH IC, HIGH FREQUENCY MODULE AND COMMUNICATION DEVICE
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Pub. No.: WO/2018/088410 International Application No.: PCT/JP2017/040183
Publication Date: 17.05.2018 International Filing Date: 08.11.2017
IPC:
H04B 1/10 (2006.01) ,H04B 1/00 (2006.01) ,H04B 1/38 (2015.01)
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
B
TRANSMISSION
1
Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
06
Receivers
10
Means associated with receiver for limiting or suppressing noise or interference
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
B
TRANSMISSION
1
Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
B
TRANSMISSION
1
Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
38
Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
浪花 優佑 NANIWA, Yusuke; JP
武藤 英樹 MUTO, Hideki; JP
Agent:
吉川 修一 YOSHIKAWA, Shuichi; JP
傍島 正朗 SOBAJIMA, Masaaki; JP
Priority Data:
2016-22100011.11.2016JP
Title (EN) SWITCH IC, HIGH FREQUENCY MODULE AND COMMUNICATION DEVICE
(FR) CIRCUIT INTÉGRÉ DE COMMUTATION, MODULE HAUTE FRÉQUENCE, ET DISPOSITIF DE COMMUNICATION
(JA) スイッチIC、高周波モジュールおよび通信装置
Abstract:
(EN) According to the present invention, an RF module (1) is provided with: a switch IC (50A) that is formed on the surface of a module substrate (100); and a passive circuit (30) that is formed on the module substrate (100). The switch IC (50A) is provided with a high frequency circuit (20A) that is formed on an IC substrate; and a digital control circuit (10). If the IC substrate is viewed in plan, the digital control circuit (10) is surrounded by the high frequency circuit (20A). The high frequency circuit (20A) has a plurality of analog ground electrodes (62); and the plurality of analog ground electrodes (62) are arranged within the high frequency circuit (20A) at the boundary with the digital control circuit (10) so as to surround the digital control circuit (10) when viewed in plane.
(FR) La présente invention concerne un module RF (1) comportant : un CI de commutation (50A) qui est formé sur la surface d'un substrat de module (100) ; et un circuit passif (30) qui est formé sur le substrat de module (100). Le CI de commutation (50A) est pourvu d'un circuit haute fréquence (20A) qui est formé sur un substrat sz CI ; et d'un circuit de commande numérique (10). Si le substrat de CI est visualisé en plan, le circuit de commande numérique (10) est entouré par le circuit haute fréquence (20A). Le circuit haute fréquence (20A) comporte une pluralité d'électrodes de masse analogiques (62) ; et la pluralité d'électrodes de masse analogiques (62) sont agencées à l'intérieur du circuit haute fréquence (20A) à la limite avec le circuit de commande numérique (10) de manière à entourer le circuit de commande numérique (10) lorsqu'il est vu en plan.
(JA) RFモジュール(1)は、モジュール基板(100)の表面に形成されたスイッチIC(50A)と、モジュール基板(100)に形成された受動回路(30)とを備え、スイッチIC(50A)は、IC基板に形成された高周波回路(20A)と、ディジタル制御回路(10)とを備え、IC基板を平面視した場合、ディジタル制御回路(10)は高周波回路(20A)に囲まれており、高周波回路(20A)は、複数のアナロググランド電極(62)を有し、複数のアナロググランド電極(62)は、上記平面視において、高周波回路(20A)内であってディジタル制御回路(10)との境界部に、ディジタル制御回路(10)を囲むように配置されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)