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1. (WO2018088371) POLISHING COMPOSITION AND SILICON WAFER POLISHING METHOD

Pub. No.:    WO/2018/088371    International Application No.:    PCT/JP2017/039983
Publication Date: Fri May 18 01:59:59 CEST 2018 International Filing Date: Tue Nov 07 00:59:59 CET 2017
IPC: H01L 21/304
B24B 37/00
C09G 1/02
C09K 3/14
Applicants: FUJIMI INCORPORATED
株式会社フジミインコーポレーテッド
Inventors: AKIZUKI Reiko
秋月 麗子
TSUCHIYA Kohsuke
土屋 公亮
TANIGUCHI Megumi
谷口 恵
Title: POLISHING COMPOSITION AND SILICON WAFER POLISHING METHOD
Abstract:
Provided are a polishing composition and a silicon wafer polishing method that are capable of providing a high degree of flatness. The polishing composition contains abrasive particles and a basic compound. The product of the abrasive particle deformation parameter and the particle diameter distribution width is at least 4. The abrasive particle deformation parameter is the average value for an absolute value | Sr/Si–1 | being a value obtained by deducting 1 from a ratio Sr/Si between a projected area Sr for each particle constituting the abrasive particles and a virtual projected area Si for each particle. The virtual projected area Si is the area of a virtual circle having the vertical Feret's diameter for each particle as the diameter thereof. The abrasive particle diameter distribution width is the difference between 90% particle diameter and 10% particle diameter in the cumulative particle diameter distribution on an abrasive particle volume basis. The unit for 90% particle diameter and 10% particle diameter is nm.