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1. (WO2018088285) SOLID-STATE IMAGING APPARATUS, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE

Pub. No.:    WO/2018/088285    International Application No.:    PCT/JP2017/039472
Publication Date: Fri May 18 01:59:59 CEST 2018 International Filing Date: Thu Nov 02 00:59:59 CET 2017
IPC: H01L 27/146
H04N 5/369
H04N 5/374
Applicants: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
ソニーセミコンダクタソリューションズ株式会社
Inventors: YAMAKAWA Shinya
山川 真弥
Title: SOLID-STATE IMAGING APPARATUS, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Abstract:
The present technology pertains to a solid-state imaging apparatus that can improve sensitivity in a near-infrared range through a simple process, a method for manufacturing the solid-state imaging apparatus, and an electronic device. This solid-state imaging apparatus is provided with: a first semiconductor layer on which a first photoelectric conversion unit and a first floating diffusion are formed; a second semiconductor layer on which a second photoelectric conversion unit and a second floating diffusion are formed; and a wiring layer that includes wiring electrically connected to the first and second floating diffusions. The first semiconductor layer and the second semiconductor layer are laminated, and the wiring layer is formed on a side opposite to the side of the first or second semiconductor layer where the first and second semiconductor layers oppose each other. The present technology can be applied to a CMOS image sensor.