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1. (WO2018088018) SCHOTTKY BARRIER DIODE AND ELECTRONIC CIRCUIT PROVIDED WITH SAME
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Pub. No.: WO/2018/088018 International Application No.: PCT/JP2017/032612
Publication Date: 17.05.2018 International Filing Date: 11.09.2017
IPC:
H01L 29/872 (2006.01) ,H01L 21/28 (2006.01) ,H01L 29/41 (2006.01) ,H01L 29/47 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
872
Schottky diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
47
Schottky barrier electrodes
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都港区芝浦三丁目9番1号 3-9-1, Shibaura, Minato-ku Tokyo 1080023, JP
Inventors:
平林 潤 HIRABAYASHI Jun; JP
松尾 裕 MATSUO Yutaka; JP
藤田 実 FUJITA Minoru; JP
有馬 潤 ARIMA Jun; JP
Agent:
鷲頭 光宏 WASHIZU Mitsuhiro; JP
緒方 和文 OGATA Kazufumi; JP
黒瀬 泰之 KUROSE Yasuyuki; JP
Priority Data:
2016-21865209.11.2016JP
Title (EN) SCHOTTKY BARRIER DIODE AND ELECTRONIC CIRCUIT PROVIDED WITH SAME
(FR) DIODE À BARRIÈRE DE SCHOTTKY ET CIRCUIT ÉLECTRONIQUE POURVU DE CETTE DERNIÈRE
(JA) ショットキーバリアダイオード及びこれを備える電子回路
Abstract:
(EN) [Problem] To minimize the generation of heat and enhance the heat dissipation performance of a Schottky barrier diode in which gallium oxide is used while ensuring adequate mechanical strength and handling performance. [Solution] The present invention is provided with: a semiconductor substrate 20 comprising gallium oxide, a recessed part 23 being provided on a second surface 22; an epitaxial layer 30 comprising gallium oxide, said epitaxial layer 30 being provided on a first surface 21 of the semiconductor substrate; an anode electrode 40 provided at a position overlapping the recessed part 23 when viewed from the lamination direction, the anode electrode 40 being in Schottky contact with the epitaxial layer 30; and a cathode electrode 50 provided in the recessed part 23 of the semiconductor substrate 20, the cathode electrode 50 being in ohmic contact with the semiconductor substrate 20. According to the present invention, the portion in which a forward current flows is selectively thinner, making it possible to minimize the generation of heat and enhance the heat dissipation performance while ensuring adequate mechanical strength and handling performance. It is thereby possible to keep the temperature of the element from increasing despite the use of gallium oxide, which has a low thermal conductivity.
(FR) Le problème décrit par l'invention est de réduire au minimum la génération de chaleur et d'améliorer la performance de dissipation de chaleur d'une diode à barrière de Schottky dans laquelle est utilisé de l'oxyde de gallium, tout en garantissant une résistance mécanique et une performance de manipulation adéquates. La solution selon l'invention porte sur : un substrat semi-conducteur 20 comprenant de l'oxyde de gallium, une partie évidée 23 étant disposée sur une seconde surface 22 ; une couche épitaxiale 30 comprenant de l'oxyde de gallium, ladite couche épitaxiale 30 étant disposée sur une première surface 21 du substrat semi-conducteur ; une électrode d'anode 40 disposée à une position chevauchant la partie évidée 23 lorsqu'on l'observe dans la direction de stratification, l'électrode d'anode 40 étant en contact de Schottky avec la couche épitaxiale 30 ; et une électrode de cathode 50 disposée dans la partie évidée 23 du substrat semi-conducteur 20, l'électrode de cathode 50 étant en contact ohmique avec le substrat semi-conducteur 20. Selon la présente invention, la partie dans laquelle circule un courant vers l'avant est sélectivement plus mince, permettant de réduire au minimum la génération de chaleur et d'améliorer la performance de dissipation de chaleur tout en garantissant une résistance mécanique et une performance de manipulation adéquates. Il est ainsi possible d'empêcher une augmentation de la température de l'élément malgré l'utilisation d'oxyde de gallium, qui a une faible conductivité thermique.
(JA) 【課題】酸化ガリウムを用いたショットキーバリアダイオードの機械的強度及びハンドリング性を確保しつつ、発熱を抑え、放熱性を高める。 【解決手段】第2の表面22側に凹部23が設けられた酸化ガリウムからなる半導体基板20と、半導体基板の第1の表面21上に設けられた酸化ガリウムからなるエピタキシャル層30と、積層方向から見て凹部23と重なる位置に設けられ、エピタキシャル層30とショットキー接触するアノード電極40と、半導体基板20の凹部23内に設けられ、半導体基板20とオーミック接触するカソード電極50とを備える。本発明によれば、順方向電流が流れる部分の厚みが選択的に薄いことから、機械的強度及びハンドリング性を確保しつつ、発熱を低減し、放熱性を高めることができる。このため、熱伝導率の低い酸化ガリウムを用いているにもかかわらず、素子の温度上昇を抑制できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)